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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION *High Power Gain: Gpe12dB,f= 27MHz, PO= 16W *High Reliability APPLICATIONS *Designed for 10~14 watts output power class AB amplifiers applications in HF band. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 60 UNIT V Collector-Emitter Voltage RBE= Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25 PC w w scs .i w 25 5 6 20 1.7 150 -55~150 V V .cn mi e A W Collector Power Dissipation @Ta=25 Tj Tstg Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 73.5 6.25 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1969 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 60 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 25 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 5 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE DC Current Gain IC= 10mA; VCE= 12V PO Output Power C Collector Efficiency hFE Classifications X 10-25 A 20-45 w w B 35-70 scs .i w C D 90-180 VCC= 12V; Pin= 1W; f= 27MHz .cn mi e 10 16 60 180 18 W 70 % 55-110 isc Websitewww.iscsemi.cn |
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