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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2751 * DESCRIPTION *With TO-3N package *High voltage ,high speed APPLICATIONS *For use in high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 30 7.5 120 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=10A ;IB=2A; L=50H IC=10A ;IB=2A IC=10A ;IB=2A VCB=400V; IE=0 VCE=400V; VBE(off)=-1.5V Ta=125 VEB=5V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IC=10A ; VCE=5V 15 10 7 MIN 400 2SC2751 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 TYP. MAX UNIT V 1.0 1.5 100 100 1.0 10 80 V V A A mA A Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;IB1=-IB2=2A RL=15@; VCCA150V 1.0 2.5 0.7 s s s hFE-1 Classifications N 15-30 R 20-40 O 30-60 Y 40-80 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2751 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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