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Datasheet File OCR Text: |
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 DESCRIPTION *With TO-3PFa package *Complement to type 2SB1157 *High transition frequency fT *Satisfactory linearity of hFE *Wide area of safe operation APPLICATIONS *For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 8 60 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1712 MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.3A 2.0 V VBE Base-emitter on voltage IC=3A ; VCE=5V 1.8 V A ICBO Collector cut-off current VCB=100V; IE=0 50 IEBO Emitter cut-off current VEB=3V; IC=0 50 A hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE -2 DC current gain IC=1A ; VCE=5V 60 200 hFE -3 DC current gain IC=3A ; VCE=5V 20 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 70 pF fT Transition frequency IC=0.5A ; VCE=5V 20 MHz hFE-2 classifications Q 60-120 S 80-60 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1712 Fig.2 Outline dimensions (unindicated tolerance:0.30mm) 3 |
Price & Availability of 2SD1712
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