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| SMD Type Silicon NPN Epitaxial Planar Type 2SD1824 Transistors Features High forward current transfer ratio hFE Low collector-emitter saturation voltage VCE(sat) High emitter-base voltage VEBO 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 100 100 15 50 20 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO hFE Testconditons IC = 10 iA, IE = 0 IC = 1 mA, IB = 0 IE = 10 iA, IC = 0 VCB = 60 V, IE = 0 VCE = 60 V, IB= 0 VCE = 10 V, IC = 2 mA 400 0.05 90 Min 100 100 15 0.1 1 1200 0.2 V MHz Typ Max Unit V V V iA iA VCE(sat) IC = 10 mA, IB = 1 mA fT VCB = 10 V, IE = -2 mA, f = 200 MHz hFE Classification Marking Rank hFE R 400 800 1V S 600 1200 www.kexin.com.cn 1 |
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