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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A DESCRIPTION *With TO-3PL package *Complement to type 2SB1317/1317A *Wide area of safe operation *High transition frequency fT APPLICATIONS *For high power amplification *Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2SD1975 VCBO Collector-base voltage 2SD1975A 2SD1975 VCEO Collector-emitter voltage 2SD1975A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 150 150 -55~150 Open collector Open base 200 5 15 25 3.5 W V A A Open emitter 200 180 V CONDITIONS VALUE 180 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBE PARAMETER Collector-emitter saturation voltage Emitter-base voltage 2SD1975 ICBO Collector cut-off current 2SD1975A IEBO hFE-1 hFE-2 hFE-3 fT COB Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10A ;IB=1A IC=8A ; VCE=5V VCB=180V; IE=0 2SD1975 2SD1975A MIN TYP. MAX 2.5 1.8 UNIT V V 50 VCB=200V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 20 60 20 20 200 200 50 A A MHz pF hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1975 2SD1975A Fig.2 Outline dimensions (unindicated tolerance:0.50 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A 4 |
Price & Availability of 2SD1975A
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