 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications). Features Features VDS (V) ==30V VDS (V) 30V IDD==11A (VGS ==10V) I 8.8A (VGS 10V) RDS(ON) < 24m (VGS GS10V) RDS(ON) < 14.5m (V = = 10V) RDS(ON) <<29m (VGS ==4.5V) RDS(ON) 18m (VGS 4.5V) RDS(ON) < 45m (VGS = 2.5V) Rg,Ciss,Coss,Crss Tested DFN 3x3 Top View Bottom View S S S G D D D D G D S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25C TA=70C IDSM IDM PDSM TJ, TSTG Maximum 30 12 8.5 7.2 40 3.0 1.9 -55 to 150 Units V V A A W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 32 65 25 Max 42 100 35 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3408 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250uA, V GS=0V VDS=24V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=8.8A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=8A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=8.8A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.7 40 20 28 23 34.5 26 0.72 1.0 4.0 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, VDS=15V, ID=8.5A 1.8 3.75 3.2 VGS=10V, V DS=15V, R L=1.7, RGEN=3 IF=8.8A, dI/dt=100A/s IF=8.8A, dI/dt=100A/s 3.5 21.5 2.7 16.8 8 20 1.5 13 nC nC ns ns ns ns ns nC 1100 24 34 29 45 S V A pF pF pF m 1 Min 30 1 5 100 1.5 Typ Max Units V uA nA V A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. 8.5 B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. 0.0 C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. 40 A E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA curve A #DIV/0! provides a single pulse rating. Rev0:Oct. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50 40 ID (A) 30 2.5V 20 10 0 0 1 2 10V 4.5V 3V ID(A) 16 VDS=5V 20 12 0.7 8 125C 1 1 uA 5 100 nA 1.5 25C 24 36.0 29.0 40 20 30.0 23 34.5 0 0.5 1 VGS=10V, ID=8.5A VGS=2V VGS=4.5V, ID=8.5A 4 VGS=2.5V, ID=5A VDS=5V, ID=11A 3 4 5 VDS (Volts) Maximum 1: On-Region CharacteristicsCurrent Figure Body-Diode Continuous 0 45 2 2.5 VGS(Volts) 4.5 Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 26 1.5 0.72 1 3 28 26 RDS(ON) (m) 24 22 20 18 16 0 5 10 ID (A) IF=8.5A, dI/dt=100A/s Figure 3: On-Resistance vs. Drain Current and Gate Voltage GS VGS=10V VGS=4.5V 1.5 900 1100 88 65 ID=8A 0.95=4.5V 1.5 VGS 10 1.8 3.75 3.2 3.5 21.5 2.7 50 75 16.8 VGS=10V ID=8.8A Qg VGS=10V, VDS=15V, ID=8.5A 1.2 V =10V, VDS=15V, RL=1.8, RGEN=3 0.9 0.6 IF=8.5A, dI/dt=100A/s 15 20 -50 -25 0 25 100 125 150 175 Temperature (C) 8 Figure 4: On-Resistance vs. Junction Temperature 60 55 50 45 RDS(ON) (m) 40 35 125C ID=8.8A 8.5 1.0E+01 0.0 A 125C 1.0E+00 40 #DIV/0! IS (A) 1.0E-01 1.0E-02 1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25C 25 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 1.0E-05 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25C 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AON3408 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=15V ID=8.8A Capacitance (pF) 1400 1200 1000 800 600 400 Crss 200 0 0 5 Ciss 4 VGS (Volts) 3 0.7 40 1 20 30 23 Coss 34.5 26 10 15 VDS0.72 (Volts) 1 uA 5 100 nA 1.5 24 36 29 45 20 25 30 2 VGS=10V, ID=8.5A 1 VGS=4.5V, ID=8.5A 0 0 2 4 6 VGS=2.5V, ID=5A VDS8 =5V, ID10 =11A 12 Qg (nC) Figure 7: Gate-Charge Characteristics Maximum Body-Diode Continuous Current 100.00 10s 10.00 1 Figure 8: Capacitance Characteristics 4.5 900 88 65 0.95 1100 TJ(Max)=150C 1.5 TA=25C 100 80 Qg VGS=10V, VDS=15V, ID=8.5A60 1.00 10s RDS(ON) limited TJ(Max)=150C TA=25C 0.1 1ms DC 40 20 Power (W) ID (Amps) 100s 0.10 VGS=10V, VDS=15V, RL=1.8, RGEN=3 0 0.0001 0.01 0.01 1 10 100 IF=8.5A, dI/dt=100A/s VDS (Volts) 0.001 F Figure 9: Maximum Forward Biased Safe Operating Area (Note E) I =8.5A, dI/dt=100A/s 10 1.8 3.75 3.2 3.5 21.5 2.7 0.01 0.1 1 16.8 Pulse Width (s) 10 100 Figure 10: Single Pulse Power Rating Junction-to8 Ambient (Note E) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 8.5 0.0 40 #DIV/0! A 0.1 on PD THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL D=T /T COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS=T +PNOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 TJ,PK ARE DM.ZJA.RJA A Ton OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Single Pulse RJA=42C/W T FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Price & Availability of AON3408
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |