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AON7430L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
Features
VDS (V) = 30V ID = 20A RDS(ON) < 12m RDS(ON) < 16m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
DFN 3x3 Top View Bottom View
D
Top View S S S G D D D D
Pin 1
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Continuous Drain Current A Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B TC=25C TC=100C TA=25C TA=70C IDSM IAR EAR PD PDSM TJ, TSTG ID IDM
Maximum 30 20 20 16 80 9 7 22 24 25 10 1.7 1 -55 to 150
Units V V A
Pulsed Drain Current C
A A mJ W W C
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 30 60 4
Max 40 75 5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7430L
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 610 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 40 0.8 11 VGS=10V, VDS=15V, ID=20A 5 1.9 1.8 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 5.6 6.4 Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A TJ=125C 1.5 80 10 14 13 45 0.7 1 25 760 125 70 1.6 14 6.6 2.4 3 4.4 9 17 6 7 8 8 9.6 910 160 100 2.4 17 8 2.9 4.2 12 17 16 1.9 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A. The value of RJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : Nov-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80 10V 60 6V 5V 30 4.5 25 4V 20 ID (A) 40 3.5V ID(A) 15 10 20 125C VGS=3V 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance VGS=10V ID=20A 25C VDS=5V
0 VDS (Volts) Fig 1: On-Region Characteristics 18 16 RDS(ON) (m) 14 12 10 8 6 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 VGS=10V VGS=4.5V
1.4
1.2
1
17 5 2 10 VGS=4.5V
ID=20A
0.8 0 25 50 75 100 125 150 175
0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature
1.0E+02
30 ID=20A 25
1.0E+01 1.0E+00
40
RDS(ON) (m)
125C 15
IS (A)
20
1.0E-01 1.0E-02 1.0E-03 125C 25C
10
25C
1.0E-04 1.0E-05
5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=20A Capacitance (pF) 1200 1000 Ciss 800 600 400 200 0 0 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 14 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
8
VGS (Volts)
6
4
2
0
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 10s Power (W)
200 160
RDS(ON) limited DC
10s 100s 1ms 10ms
120 80 40 0 0.0001
TJ(Max)=150C TC=25C
17 5 2 10
TJ(Max)=150C TC=25C
0.1 1 VDS (Volts) 10 100
0.0 0.01
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7430L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 ID(A), Peak Avalanche Current TA=25C 50 40 30 20 10 0 0.000001 TA=150C TA=100C TA=125C Power Dissipation (W) 25 20 15 10 5 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note F) 30
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
25 20 Current rating ID(A) 15 10 5 0 0 25 50 75 100 125 150 TCASE (C) Figure 14: Current De-rating (Note F)
10000
TA=25C
1000
100
17 5 2 10
Power (W)
10
1 0.00001
0.001
0.1
10
0
1000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=75C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7430L
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
E AR= 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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