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SMD Type Dual P-Channel 1.8-V (G-S) MOSFET KI1905DL SOT-363 1.3 +0.1 -0.1 Transistors IC Unit: mm Features 0.65 0.525 0.36 Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 )* TA=25 -TA=85 Pulsed drain current Continuous source current (diode conduction) * Power dissipation * -TA=25 TA=85 Symbol VDS VGS ID IDM IS PD Tj,Tstg -0.25 0.30 0.16 -55 to +150 0.60 0.43 1.0 -0.23 0.27 0.14 5 secs -8 8 0.57 0.41 Steady State Unit V V A A A W Operating junction and storage temperature range * Surface Mounted on 1" X 1" FR4 Board. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 5 sec Symbol RthJA RthJF Typical 360 400 300 Maximum 415 460 350 /W Unit Steady State Steady State * Surface Mounted on 1" X 1" FR4 Board. +0.05 0.95-0.05 0.1max +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.1 1.25-0.1 +0.15 2.3-0.15 www.kexin.com.cn 1 SMD Type KI1905DL Electrical Characteristics Ta = 25 Parameter Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 8V Transistors IC Min -0.45 Typ Max Unit V 100 -1 -5 -1.0 0.51 0.72 1.0 1.2 -0.8 1.5 -1.2 2.3 0.600 0.85 1.2 nA A A VDS = -6.4 V, VGS = 0 V VDS =-6.4 V, VGS = 0 V, TJ = 85 VDS =-5 V, VGS = -4.5 V VGS = -4.5 V, ID = -0.57 A Drain-source on-state resistance rDS(on) VGS = -2.5 V, ID = -0.48 A VGS = -1.8V, ID =-0.20A Forward transconductance Diode forward voltage Total gate charge * Gate-source charge * Gate-drain charge * Turn-on time gfs VSD Qg Qgs Qgd td(on) tr VDS = -10 V, ID = -0.57 A IS = -0.23 A, VGS = 0 V S V VDS =-4V ,VGS = -4.5 V , ID= -0.57A 0.17 0.16 6 12 50 20 20 40 nC Turn-off time Source-Drain Reverse Recovery Time * Pulse test: PW 300 is duty cycle 2%. td(off) tf trr VDD = -4V , RL = 8 , ID =-0.5A , VGEN =-4.5V , RG = 6 25 10 10 ns IF = -0.23 A, di/dt = 100 A/ s 20 Marking Marking QB 2 www.kexin.com.cn |
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