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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJ1000/1001 DESCRIPTION *With TO-3 package *DARLINGTON *High DC current gain *Complement to type MJ900/901 APPLICATIONS *For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJ1000 VCBO Collector-base voltage MJ1001 MJ1000 VCEO Collector-emitter voltage MJ1001 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 10 0.1 90 200 -55~200 V A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJ1000 IC=0.1A ;IB=0 MJ1001 IC=3A; IB=12mA IC=8A; IB=40mA IC=3A ; VCE=3V MJ1000 ICER Collector cut-off current MJ1001 MJ1000 ICEO Collector cut-off current MJ1001 IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=40V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=4A ; VCE=3V VCE=60V; RBE=1.0k@ TC=150 VCE=80V; RBE=1.0k@ TC=150 VCE=30V; IB=0 80 CONDITIONS MJ1000/1001 SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V VCE(sat)-1 VCE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2.0 4.0 2.5 1.0 5.0 1.0 5.0 V V V mA 0.5 mA 2.0 1000 750 mA THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.94 UNIT /W 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJ1000/1001 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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