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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJ15004 DESCRIPTION With TO-3 package Complement to type MJ15003 Excellent safe operating area APPLICATIONS For high power audio,disk head positioners and other linear applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB IE PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage INC Emitter-base voltage Collector current E SEM ANG H Open base TC=25ae Open emitter OND IC CONDITIONS TOR UC VALUE -140 -140 -5 -20 -5 25 250 200 -65~200 UNIT V V V A A A W ae ae Open collector Base current Emitter current Total power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.7 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-5A; IB=-0.5A IC=-5A ; VCE=-2V VCE=-140V; IB=0 VCE=-140V; VBE(off)=-1.5V TC=150ae VEB=-5V; IC=0 IC=-5A ; VCE=-2V VCE=-50Vdc,t=1 s, Nonrepetitive Is/b Second breakdown collector current With base forward biased 25 -5 MIN -140 MJ15004 SYMBOL VCEO(SUS) VCEsat VBE ICEO ICEX IEBO hFE TYP. MAX UNIT V -1.0 -2.0 -0.25 -0.1 -2.0 -0.1 150 V V mA mA mA COB fT Output capacitance VCE=-100Vdc,t=1 s, Nonrepetitive IE=0 ; VCB=-10V;f=1.0MHz CHA IN Transition frequency E SEM NG OND IC TOR UC -1 1000 2 A pF MHz IC=-0.5A ; VCE=-10V;f=0.5MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJ15004 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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