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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1339 DESCRIPTION *With TO-220C package *High DC current gain *Low saturation voltage *DARLINGTON APPLICATIONS *For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -6 -6 -10 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1339 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -120 V V(BR)CBO Collector-base breakdown voltage IC=-50A; IE=0 -120 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-6mA B -1.5 V A ICBO Collector cut-off current VCB=-120V; IE=0 -100 IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE DC current gain IC=-2A ; VCE=-3V 2000 20000 fT Transition frequency IC=-0.5A ; VCE=-5V 12 MHz COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 70 pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1339 Fig.2 Outline dimensions (unindicated tolerance: 0.10 mm) 3 |
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