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 INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SB628
DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) *Complement to Type 2SD608
APPLICATIONS *Designed for audio frequency power amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC ICM
Collector Current-Continuous
w
ww
scs .i
VALUE -160 -160 -5 -1.5 -3.0 -0.3 1.5
UNIT
V
V
.cn mi e
V
A
Collector Current-Peak
A
IB
B
Base Current-Continuous Collector Power Dissipation @ Ta=25
A
PC Collector Power Dissipation @ TC=25 TJ Junction Temperature 20
W
150

Tstg
Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
2SB628
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
B
-2.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -1A; IB= -0.1A
B
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-1.0
A
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
-1.0
A
hFE-1
DC Current Gain
IC= -5mA; VCE= -5V
hFE-2
DC Current Gain
COB
Collector Output Capacitance
fT
Current-Gain--Bandwidth Product
hFE-2 Classifications S 40-80 R 60-120
w w
Q 100-200
w.
sem isc
IC= -0.3A; VCE= -5V IE= 0; VCB= -10V; f= 1MHz IC= -0.1A; VCE= -5V
.cn i
40
25
200
35
pF
40
MHz
isc Websitewww.iscsemi.cn
2


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