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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB655 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) *High Power Dissipation: PC= 100W(Max)@TC=25 *Complement to Type 2SD675 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE -160 -160 -5 -12 -20 100 150 -55~150 UNIT V .cn mi e V V A A Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= -50mA; RBE= IE= -5mA; IC= 0 IC= -6A; IB= -0.6A B 2SB655 MIN -160 -5 TYP. MAX UNIT V V -2.5 -1.5 -0.1 60 200 V V mA IC= -1A; VCE= -5V VCB= -120V; IE= 0 hFE Classifications B 60-120 C 100-200 w w. w .cn mi cse is IC= -1A; VCE= -5V IC= -6A; VCE= -5V 20 IC= -1A; VCE= -5V 22 MHz isc Websitewww.iscsemi.cn |
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