 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION *High Power Gain: Gp12dB,f= 27MHz, PO= 16W *High Reliability APPLICATIONS *Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ICM Collector Current w w scs .i w 80 30 5 6 20 1.7 150 V V .cn mi e V A Collector Power Dissipation @TC=25 PC Collector Power Dissipation @Ta=25 Tj Junction Temperature W Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2716 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE= 25V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.5A; VCE= 5V 20 180 PO Output Power Power Efficiency w w scs .i w VCC= 12V;Pin= 1W, f=27MHz .cn mi e 16 60 18 W 70 % isc Websitewww.iscsemi.cn |
Price & Availability of 2SC2716
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |