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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220C package *High breakdown voltage : VCBO=800V(Min) *Fast switching speed. *Wide area of safe operation APPLICATIONS *500V/3A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC3086 * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector dissipation 1.75 Tj Tstg Junction temperature Storage temperature 150 -55~150 PW300s, Duty Cycle10% CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 3 6 1 40 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IC=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=500V ;IE=0 VEB=5V; IC=0 IC=0.3A ; VCE=5V IC=1.5A ; VCE=5V IC=0.3A ; VCE=10V f=10MHz ; VCB=10V 15 8 18 40 MIN 500 800 7 2SC3086 TYP. MAX UNIT V V V 1.0 1.5 10 10 50 V V A A MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time VCC=200V; IC=2A IB1=0.4A;IB2=-0.4A; RL=100 1.0 3.0 1.0 s s s hFE-1 classifications L 15-30 M 20-40 N 30-50 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3086 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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