![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5196 DESCRIPTION *Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 5A *Good Linearity of hFE *Complement to Type 2SA1939 APPLICATIONS *Power amplifier applications *Recommend for 40W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w scs .i UNIT 80 V 80 V 5 V 6 A 0.6 A 60 W .cn mi e IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5196 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 80V ; IE= 0 5 A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 A hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications R 55-110 O 80-160 w w scs .i w IC= 3A ; VCE= 5V IE= 0; VCB= 10V; ftest= 1.0MHz .cn mi e 55 35 160 75 pF IC= 1A ; VCE= 5V 30 MHz isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC5196
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |