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Leistungsstarke IR-Lumineszenzdiode High Power Infrared Emitter SFH 4203 Wesentliche Merkmale * * * * * * Leistungsstarke GaAs-LED (35mW) Hoher Wirkunsgrad bei kleinen Stromen Homogene Abstrahlung Typische Peakwellenlange 950nm IR Reflow Loten geeignet Feuchte-Empfindlichkeitsstufe 2 nach JEDEC Standard J-STD-020A Features * * * * * * High Power GaAs-LED (35mW) High Efficiency at low currents Homogeneous Radiation Pattern Typical peak wavelength 950nm Suitable for IR reflow soldering Moisture Sensitivity Level 2 according to JEDEC Standard J-STD-020A Anwendungen * Miniaturlichtschranken fur Gleich- und Wechsellichtbetrieb, Lochstreifenleser * Industrieelektronik * Messen/Steuern/Regeln" * Automobiltechnik * Sensorik * Alarm- und Sicherungssysteme * IR-Freiraumubertragung * IR-Scheinwerfer fur Kameras Typ Type SFH 4203 1) Applications * * * * * * * * Miniature photointerrupters Industrial electronics For drive and control circuits Automotive technology Sensor technology Alarm and safety equipment IR free air transmission IR spotlight for cameras Bestellnummer Ordering Code Q62702-P5232 Strahlstarkegruppierung 1) (IF = 100mA, tp = 20 ms) Radiant intensity grouping 1) Ie (mW/sr) 8 (>4) gemessen bei einem Raumwinkel = 0.01 sr measured at a solid angle of = 0.01 sr 2003-12-09 1 SFH 4203 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Parameter Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Symbol Symbol Wert Value - 40 ... + 100 3 100 1 180 450 Einheit Unit C V mA A mW K/W Top; Tstg VR IF (DC) IFSM Ptot Warmewiderstand Sperrschicht - Umgebung bei RthJA Montage auf FR4 Platine, Padgroe je 16 mm2 Thermal resistance junction - ambient mounted on PC-board (FR4), padsize 16 mm2 each Warmewiderstand Sperrschicht - Lotstelle bei RthJS Montage auf Metall-Block Thermal resistance junction - soldering point, mounted on metal block Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA, tp = 20 ms Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimensions of the active chip area Symbol Symbol peak 200 K/W Wert Value 950 Einheit Unit nm 40 nm 65 0.09 0.3 x 0.3 Grad deg. mm2 mm A LxB LxW 2003-12-09 2 SFH 4203 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value 10 Einheit Unit ns Schaltzeiten, Ie von 10% auf 90% und von 90% tr, tf auf 10%, bei IF = 100 mA, tp = 20 ms, RL = 50 Switching times, e from 10% to 90% and from 90% to10%, IF = 100 mA, tp = 20 ms, RL = 50 Durchlaspannung, Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom, Reverse current VR = 3 V Gesamtstrahlungsflu, Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, VF VF IR 1.5 ( 1.8) 3.2 ( 4.3) 0.01 ( 10) V V A e 35 mW TCI - 0.44 %/K IF = 100 mA IF = 100 mA Temperature coefficient of Ie or e, Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TCV TC - 1.5 + 0.2 mV/K nm/K Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Ie min. Ie typ. Ie typ. Werte Values 4 8 48 Einheit Unit mW/sr mW/sr mW/sr 2003-12-09 3 SFH 4203 Relative Spectral Emission Irel = f () 100 OHF00777 Radiant Intensity Ie = f (IF) Ie 100 mA Single pulse, tp = 20 s 10 2 e e (100 mA) OHF00809 Forward Current IF = f (VF) single pulse, tp = 20 s 10 4 mA 10 3 10 2 OHF00784 erel 80 F 60 10 0 10 1 10 0 10 -1 40 10 -1 20 10 -2 10 -2 0 800 850 900 950 1000 nm 1100 10 -3 10 0 10 1 10 2 10 3 mA 10 4 F 10 -3 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VF Max. Permissible Forward Current IF = f (TA), RthJA1) 120 OHF00359 Radiation Characteristics Irel = f () 40 30 20 10 0 OHL00869 F mA 100 50 1.0 0.8 80 R thJA = 375 K/W 60 0.4 70 0.6 60 40 0.2 80 20 90 0 0 0 20 40 60 80 100 C 120 TA 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 1) Thermal resistance junction ambient mounted on PC-board (FR4), pad size 16 mm2 (each). 4 2003-12-09 SFH 4203 Mazeichnung Package Outlines 1.2 (0.047) 1.0 (0.039) 0.8 (0.031) 0.5 (0.020) 0.3 (0.012) 1.4 (0.055) 1.2 (0.047) 0.15 (0.006) 0.05 (0.002) 1.9 (0.075) 1.5 (0.059) 2.3 (0.091) 2.1 (0.083) 2.1 (0.083) Light emitting area typ. 1.5 (0.059) x 1.0 (0.039) Anode marking Anode marking 0.8 (0.031) +0.05 (0.002) 1.0 (0.039) 1.5 (0.059) 1.3 (0.051) GPLY6070 Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2003-12-09 5 SFH 4203 Lothinweise Soldering Conditions Bauform Types Lotzonentemperatur Temperature of Soldering Zone Mini TOPLED 245 C Reflowlotung Reflow Soldering Maximale Durchlaufzeit Max. Transit Time 10 s Zusatzliche Informationen uber allgemeine Lotbedingungen erhalten Sie auf Anfrage. For additional information on general soldering conditions please contact us. Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2003-12-09 6 |
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