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| Datasheet File OCR Text: |
| ST 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the NPN transistors ST 2N5550 and ST 2N5551 are recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Collector Emitter Voltage ST 2N5400 ST 2N5401 Collector Base Voltage ST 2N5400 ST 2N5401 Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range 1) Value 120 150 130 160 5 600 625 1) Unit V V V V V mA mW o o -VCEO -VCEO -VCBO -VCBO -VEBO -IC Ptot Tj TS 150 -55 to +150 C C Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated: 07/12/2002 ST 2N5400 / 2N5401 Characteristics at Tamb=25 oC Symbol DC Current Gain at-VCE=5V, -IC=1mA at -VCE=5V, -IC=10mA at -VCE=5V, -IC=50mA ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 Collector Emitter Breakdown Voltage at -IC=1mA Collector Base Breakdown Voltage at -IC=100A Emitter Base Breakdown Voltage at -IE=10A Collector Cutoff Current at -VCB=100V at -VCB=120V Emitter Cutoff Current at -VEB=3V Collector Saturation Voltage at -IC=10mA, -IB=1mA at -IC=50mA, -IB=5mA Base Saturation Voltage at -IC=10mA, -IB=1mA at -IC=50mA, -IB=5mA Gain Bandwidth Product at -VCE=10V,-IC=10mA,f=100MHz ST 2N5400 Min. 30 50 40 60 40 50 120 150 130 160 5 100 100 - Typ. - Max. 180 240 100 50 50 0.2 0.5 1 1 400 400 6 8 200 1) Unit V V V V V nA nA nA V V V V MHz MHz pF dB K/W hFE hFE hFE hFE hFE hFE -V(BR)CEO -V(BR)CEO -V(BR)CBO -V(BR)CBO -V(BR)EBO ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 ST 2N5400 ST 2N5401 -ICBO -ICBO -IEBO -VCE sat -VCE sat -VBEsat -VBEsat fT fT CCBO F RthA ST 2N5401 Collector Base Capacitance at -VCB=10V, f=1MHz Noise Figure at -VCE=5V,-IC=200A,RG=2k,f=30HZ...15kHZ Thermal Resistance Junction to Ambient 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated: 07/12/2002 ST 2N5400 / 2N5401 Ptot-Ta IC - VBE Power Dissipation Ptot (mW) Ambient Temperature Ta ( ) Collector Current Ic (mA) Base Emitter Voltage VBE (V) fT - IC Collector Emitter Saturation Base Emitter Saturation Voltage V C E ( s a t ) , V B E ( s at ) ( m V ) V CE(sat), V BE(sat) - I C Transition Frequency VBE(sat) VCE(sat) C o l l e c t o r C u r r e n t IC ( m A ) C o l l e c t o r C u r r e n t IC ( m A ) Cob - VCB Collector Output Capacitance Cob (pF) Collector Base Voltage VCB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated: 07/12/2002 |
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