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| Semiconductor SUT575EF Epitaxial planar NPN/PNP silicon transistor Description * Complex type bipolar transistor Feature * Very small package save PCB area * Reduce quantity of parts and mounting cost * Both DN030 chip and DP030 chip in SOT-563F package Ordering Information Type NO. SUT575EF Marking NX Package Code SOT-563F Outline Dimensions unit : mm 0.50 Typ. 1.50~1.70 1.10~1.30 1.50~1.70 1 2 3 0.50 Typ. 6 5 0.30 Max. * Equivalent Circuit 3 2 1 4 Tr2 Tr1 4 5 6 PIN Connections 1. Emitter 1 2. Base 1 3. Collector 2 4. Emitter 2 5. Base 2 6. Collector 1 0.53~0.62 0.10 Max. KSD-T5U007-000 0.18 Max. 1 SUT575EF Absolute Maximum Ratings [Tr1, Tr2] Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range : Total rating (Ta=25C) Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating Tr1 Tr2 15 12 5 500 150 150 -55~150 -15 -12 -5 -500 Unit V V V mA mW C C Electrical Characteristics [Tr1] Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Ta=25C) Symbol BVCEO ICBO IEBO hFE* VCE(sat) VCE(sat)* VBE(sat) VBE(sat)* fT Cob Test Condition IC=1mA, IB=0 VCB=15V, IE=0 VEB=5V, IC=0 VCE=2V, IC=10mA IC=100mA, IB=10mA IC=300mA, IB=30mA IC=100mA, IB=10mA IC=300mA, IB=30mA VCE=5V, IC=10mA VCB=10V, IE=0, f=1MHz Min. Typ. Max. 12 200 300 3 0.1 0.1 450 0.2 0.5 1.2 1.7 - Unit V A A V V V V MHz pF *: Pulse test: tP300s, Duty cycle2% Electrical Characteristics [Tr2] Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage (Ta=25C) Symbol BVCEO ICBO IEBO hFE* VCE(sat) VCE(sat)* VBE(sat) VBE(sat)* fT Cob Test Condition IC=-1mA, IB=0 VCB=-15V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-10mA IC=-100mA, IB=-10mA IC=-300mA, IB=-30mA IC=-100mA, IB=-10mA IC=-300mA, IB=-30mA VCE=-5V, IC=-10mA VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -12 200 350 4 -0.1 -0.1 450 -0.2 -0.5 -1.2 -1.7 - Unit V A A V V V V MHz pF Base-emitter saturation voltage Transition frequency Collector output capacitance *: Pulse test: tP300s, Duty cycle2% KSD-T5U007-000 2 SUT575EF Electrical Characteristic Curves [Tr1] Fig. 1 IC -VCE Fig. 2 IC -VBE Fig. 3 hFE-IC Fig. 4 VCE(sat)-IC KSD-T5U007-000 3 SUT575EF Electrical Characteristic Curves [Tr2] Fig. 1 IC -VCE Fig. 2 IC -VBE Fig. 3 hFE-IC Fig. 4 VCE(sat)-IC The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T5U007-000 4 |
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