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| ZM-PTZ3V6B ~ ZM-PTZ36B SILICON EPITAXIAL PLANAR ZENER DIODES LL-41 Features * Small surface mounting type * 1 W of power can be obtained despite compact size * High surge withstand level Applications * Voltage regulation and voltage limiting * Voltage surge absorption Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation 1) Symbol Ptot Tj TS Value 1 150 - 55 to + 150 Unit W O Junction Temperature Storage Temperature Range 1) C C O Mounting density of other power components should be taken into consideration when laying out the pattern. Zener Voltage Range Type ZM-PTZ3V6B ZM-PTZ3V9B ZM-PTZ4V3B ZM-PTZ4V7B ZM-PTZ5V1B ZM-PTZ5V6B ZM-PTZ6V2B ZM-PTZ6V8B ZM-PTZ7V5B ZM-PTZ8V2B ZM-PTZ9V1B ZM-PTZ10B ZM-PTZ11B ZM-PTZ12B ZM-PTZ13B ZM-PTZ15B ZM-PTZ16B ZM-PTZ18B ZM-PTZ20B ZM-PTZ22B ZM-PTZ24B ZM-PTZ27B ZM-PTZ30B ZM-PTZ33B ZM-PTZ36B Min. 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13.3 14.7 16.2 18 20 22 24 27 30 33 36 Vz (V) Max. 4 4.4 4.8 5.2 5.7 6.3 7 7.7 8.4 9.3 10.2 11.2 12.3 13.5 15 16.5 18.3 20.3 22.4 24.5 27.6 30.8 34 37 40 IZ (mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Operating Resistance Zz () Max. 15 15 15 10 8 8 6 6 4 4 6 6 8 8 10 10 12 12 14 14 16 16 18 18 20 IZ (mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Max. 20 20 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Reverse current IR (uA) VR (V) 1 1 1 1 1 1.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 1) 2) Tested with pulses tp = 20 ms. The operating resistances (ZZ, ZZK) are measured by superimposing a minute alternating current on the regulated current (Iz). SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/05/2006 ZM-PTZ3V6B ~ ZM-PTZ36B Derating curve 1200 Glass epoxy substrate 32x30x1.6(mm) 200 Rise in surface temperature ALUMINA SUBSTRATE 114X124X1.6(mm) 200 Rise in surface temperature Power dissipation(mW) Rise in diode a surface temperature( C) 1.5W Rise in diode a surface temperature( C) 1.5W 1W 800 Ceramic substrate 82x30x1.0(mm) 100 1W 100 0.5W 400 Individual part (not mounted) 0.5W 0 50 87.5 100 150 200 1 10 100 0 1 GLASS EPOXY SUBSTRATE 144X220X1.6(mm) 10 100 0 Ta ( C) Mounting quantity(pcs/substrate) Mounting quantity(pcs/substrate) 0.10 Zener voltage - temp. coefficient characteristics Iz=20mA Iz=40mA Zener voltage characteristics 100m 4.3 4.7 5.1 10m 3.9 3.6 5.6 6.2 6.8 7.5 8.2 9.1 10 12 11 13 15 16 18 20 22 Temperature coefficient (%/ C) 0.08 24 27 30 33 36 0.04 Zener current, (A) 125-25 C 0 1m 0 100 -0.04 10 -0.08 10 20 30 40 1 0 5 10 15 20 25 30 35 40 Zener voltage (V) Zener voltage (V) SEMTECH ELECTRONICS LTD. (R) (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/05/2006 |
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