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| FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET August 2007 SuperFET FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Features * 650V @TJ = 150C * Typ. Rds(on)=0.22 * Ultra low gate charge (typ. Qg=55nC) * Low effective output capacitance (typ. Coss.eff=110pF) * 100% avalanche tested TM Description SuperFETTM is, Farichild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D G TO-3P GDS FCA Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C (Note 2) (Note 1) (Note 1) (Note 3) Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed (Note 1) FCA16N60 600 16 10.1 48 30 450 16 16.7 4.5 167 1.33 -55 to +150 300 Unit V A A A V mJ A mJ V/ns W W/C C C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient FCA16N60 0.75 41.7 Unit C/W C/W (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 REV. A2 FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Package Marking and Ordering Information Device Marking FCA16N60 FCA16N60 Device FCA16N60 FCA16N60_F109 Package TO-3P TO-3PN Reel Size - Tape Width - Quantity 30 30 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Coss Coss eff. td(on) tr td(off) tf Qg Qgs Qgd TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Conditions VGS = 0V, ID = 250A, TJ = 25C VGS = 0V, ID = 250A, TJ = 150C Min 600 -------- Typ -650 0.6 700 ----- Max Units ----1 10 100 -100 V V V/C V A A nA nA Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ID = 250A, Referenced to 25C VGS = 0V, ID = 16A VDS = 600V, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz (Note 4) On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 3.0 ---0.22 11.5 5.0 0.26 -V S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz VDS = 0V to 400V, VGS = 0V VDD = 300V, ID = 16A RG = 25 -----1730 960 85 45 110 2250 1150 -60 -pF pF pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480V, ID = 16A VGS = 10V (Note 4, 5) (Note 4, 5) -------- 42 130 165 90 55 10.5 28 85 270 340 190 70 13 -- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 8A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 16A dIF/dt =100A/s (Note 4) ------ ---435 7.0 16 48 1.4 --- A A V ns C 2 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics 10 2 Figure 2. Transfer Characteristics 10 2 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID , Drain Current [A] ID, Drain Current [A] 10 1 10 1 150 ) C 25 ) C 10 0 -55 ) C * Note: 1. VDS = 40V 2. 250s Pulse Test 10 0 * Notes : 1. 250s Pulse Test 2. TC = 25 C -1 0 1 o 10 10 10 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS , Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 2 0.6 0.5 RDS(ON) [], 0.4 VGS = 10V IDR , Reverse Drain Current [A] Drain-Source On-Resistance 10 1 0.3 VGS = 20V 0.2 10 0 150 ) C 25 ) C Notes : 0.1 * Note : J = 25 C o 1. VGS = 0V 2. 250 s Pulse Test 0.0 0 5 10 15 20 25 30 35 40 45 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 5. Capacitance Characteristics 7000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 6000 VGS, Gate-Source Voltage [V] Crss = Cgd VDS = 100V 10 VDS = 250V VDS = 480V 5000 Capacitance [pF] 8 4000 Coss Notes : 6 3000 Ciss 1. VGS = 0 V 2. f = 1 MHz 4 2000 1000 Crss 2 Note : ID = 16A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 60 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.2 BVDSS, (Normalized) Drain-Source Breakdown Voltage Drain-Source On-Resistance 2.5 1.1 RDS(ON), (Normalized) 2.0 1.0 1.5 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 A 1.0 Notes : 0.5 1. VGS = 10 V 2. ID = 8 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 10 2 Operation in This Area is Limited by R DS(on) 10 us 100 us ID, Drain Current [A] 15 10 1 1 ms DC ID, Drain Current [A] 10 3 10 10 0 Notes : 10 -1 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o o 5 10 -2 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [C] Figure 11. Transient Thermal Response Curve 10 0 ZJC(t), Thermal Response D = 0 .5 N o te s : 0 .2 10 -1 1 . Z J C (t) = 0 .7 5 C /W M a x . o 0 .1 0 .0 5 0 .0 2 0 .0 1 2 . D u ty F a c to r, D = t 1 /t 2 3 . T JM - T C = P D M * Z J C (t) PDM t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 4 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters 7 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET Mechanical Dimensions (continued) TO-3PN Dimensions in Millimeters 8 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com FCA16N60 / FCA16N60_F109 600V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 9 FCA16N60 / FCA16N60_F109 REV. A2 www.fairchildsemi.com |
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