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| HIGH-SPEEDGaAlAsIREMITTERS 1.00 MIN. GLASS DOME OD-870F FEATURES * High reliability LPE grown GaAlAs * High power output * Fast response * Wide range of linear power output * Custom packages available * Custom spectral emission from 780-870nm available ANODE (CASE) .015 .209 .220 .183 .186 .152 .154 .017 .100 .041 .030 .040 .197 .205 All surfaces are gold plated. Dimensions are nominal values in inches unless otherwise specified. Window caps are welded to the case. CATHODE .036 45 RoHS ELECTRO-OPTICAL CHARACTERISTICS AT 25C PARAMETERS Total Power Output, Po TEST CONDITIONS IF = 100mA IF = 50mA IF = 100mA IR = 10 A VR = 0V MIN 3.5 TYP 4.5 870 50 8 5 MAX UNITS mW nm nm Peak Emission Wavelength, P Spectral Bandwidth at 50%, Half Intensity Beam Angle, Forward Voltage, VF Capacitance, C Rise Time Fall Time Reverse Breakdown Voltage, VR 2 1.5 150 15 15 1.8 Volts Volts nsec nsec pF Deg ABSOLUTE MAXIMUM RATINGS AT 25C CASE Continuous Forward Current Reverse Voltage Power Dissipation1 180mW 100mA 2V 3A Peak Forward Current (10 s, 200Hz)2 Lead Soldering Temperature (1/16" from case for 10sec) 1Derate per Thermal Derating Curve above 25C 2Derate linearly above 25C 260C THERMAL PARAMETERS Storage and Operating Temperature Range Maximum Junction Temperature Thermal Resistance, RTHJA1 -55C TO 100C 400C/W Typical 135C/W Typical 100C 1Heat transfer minimized by measuring in still air with minimum heat conducting through leads 2Air circulating at a rapid rate to keep case temperature at 25C Thermal Resistance, RTHJA2 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com HIGH-SPEEDGaAlAsIREMITTERS 200 180 POWER DISSIPATION (mW) 160 140 120 100 80 60 40 20 0 25 50 75 AMBIENT TEMPERATURE (C) 100 NO HEAT SINK INFINITE HEAT SINK OD-870F 10 PEAK FORWARD CURRENT, Ip (amps) THERMAL DERATING CURVE MAXIMUM PEAK PULSE CURRENT t = 10 s 1 t = 100 s t = 500 s MAXIMUM RATINGS 0.1 t Ip T 0.1 D= t T 0.01 0.01 1 DUTY CYCLE, D (%) 10 100 TYPICAL CHARACTERISTICS 120 DEGRADATION CURVE IF = 100mA IF = 50mA IF = 20mA 100 RADIATION PATTERN RELATIVE POWER OUTPUT (%) 100 RELATIVE POWER OUTPUT (%) 104 105 110 80 60 90 40 80 TCASE = 25C NO PRE BURN-IN PERFORMED 20 70 101 102 103 STRESS TIME, (hrs) 0 -25 -20 -15 -10 -5 0 5 10 BEAM ANGLE, (deg) 15 20 25 4 FORWARD I-V CHARACTERISTICS 1.5 1.4 POWER OUTPUT vs TEMPERATURE FORWARD CURRENT, IF (amps) RELATIVE POWER OUTPUT 0 1 2 3 4 FORWARD VOLTAGE, VF (volts) 5 6 3 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 2 1 0 -25 0 25 50 AMBIENT TEMPERATURE (C) 75 100 100 SPECTRAL OUTPUT 1,000 POWER OUTPUT vs FORWARD CURRENT RELATIVE POWER OUTPUT (%) 60 POWER OUTPUT, P (mW) o 80 100 10 40 20 1 DC PULSE 10 s, 100Hz 0 750 800 850 900 WAVELENGTH, (nm) 950 1,000 1 0.1 10 100 1,000 FORWARD CURRENT, IF (mA) 10,000 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: www.optodiode.com |
Price & Availability of OD-870F
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