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ST 8550 (2A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 C
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Symbol -VCBO -VCEO -VEBO -IC -IB Ptot Tj TS Symbol hFE hFE hFE hFE -ICBO -IEBO -V(BR)CBO -V(BR)CEO -V(BR)EBO -VCE(sat) -VBE(sat) -VBE(on) fT COB Min. 45 120 160 40 40 25 6 120 -
Value 40 25 6 2 100 1 150 - 55 to + 150 Typ. 15 Max. 200 300 100 100 0.5 1.2 1 -
Unit V V V A mA W
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C C Unit nA nA V V V V V V MHz pF
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Parameter DC Current Gain at -VCE = 1 V, -IC = 5 mA at -VCE = 1 V, -IC = 100 mA at -VCE = 1 V, -IC = 1.5 A Collector Base Cutoff Current at -VCB = 35 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 100 A Collector Emitter Breakdown Voltage at -IC = 2 mA Emitter Base Breakdown Voltage at -IE = 100 A Collector Emitter Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter Saturation Voltage at -IC = 1.5 A, -IB = 100 mA Base Emitter On Voltage at -IC = 10 mA, -VCE = 1 V Gain Bandwidth Product at -VCE = 10 V, -IC = 50 mA Collector Base Capacitance at -VCB = 10 V, f = 1 MHz
8550C 8550D
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 14/08/2008

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