 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STB12NK80Z STP12NK80Z - STW12NK80Z N-channel 800V - 0.65 - 10.5A - TO-220 - D2PAK - TO-247 Zener - Protected SuperMESHTM Power MOSFET Features Type STB12NK80Z STP12NK80Z STW12NK80Z VDSS RDS(on) (@Tjmax) 800V 800V 800V ID PW <0.75 10.5 A 190W <0.75 10.5 A 190W 1 3 2 <0.75 10.5 A 190W TO-220 3 1 TO-247 Extremely high dv/dt capability Improved esd capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing reliability D2PAK Internal schematic diagram Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Application Switching application Order codes Part number STB12NK80Z STP12NK80Z STW12NK80Z Marking B12NK80Z P12NK80Z W12NK80Z Package D2PAK TO-220 TO-247 Packaging Tape & reel Tube Tube April 2007 Rev 6 1/16 www.st.com 16 Contents STB12NK80Z - STP12NK80Z - STW12NK80Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM(1) PTOT dv/dt(2) TJ Tstg Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Peak diode recovery voltage slope Operating junction temperature Storage temperature Value 800 800 30 10.5 6.6 42 190 1.51 4.5 -55 to 150 Unit V V V A A A W W/C V C 1. Pulse width limited by safe operating area 2. ISD 10.5 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX Table 2. Symbol Thermal data Value Parameter TO-220/ DPAK 0.66 62.5 300 50 Unit TO-247 C/W C/W C Rthj-case Rthj-a Tl Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 10.5 400 Unit A mJ 3/16 Electrical characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Peak diode recovery voltage slope Test conditions ID = 1mA, VGS= 0 VDS =Max rating, VDS =Max rating, Tc=125C Min. 800 1 50 10 Typ. Max. Unit V A A A V IDSS IGSS VGS(th) RDS(on) Gate body leakage current VGS = 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS= VGS, ID = 100A VGS= 10V, ID = 5.25A 3 3.75 0.65 4.5 0.75 Table 5. Symbol gfs (1) Dynamic Parameter Test conditions Min. Typ. 12 2620 250 53 100 87 14 44 30 18 70 20 16 15 28 Max. Unit S pF pF pF pF nC nC nC ns ns ns ns ns ns ns Forward transconductance VDS =15V, ID = 5.25A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Off-voltage rise time Fall time Off voltage rise time Fall time Cross-over time Ciss Coss Crss Cosseq(2) Qg Qgs Qgd td(on) tr td(off) tf tr(Voff) tf tc VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 640V VDD=640V, ID = 10.5A VGS =10V (see Figure 18) VDD=400 V, ID= 5.25A, RG=4.7, VGS=10V (see Figure 19) VDD=640 V, ID= 10.5A, RG=4.7, VGS=10V (see Figure 19) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Electrical characteristics Table 6. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10.5A, VGS=0 ISD=10.5A, di/dt = 100A/s, VDD=100V, Tj=150C 635 5.9 18.5 Test conditions Min Typ. Max 10.5 42 1.6 Unit A A V ns C A trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Table 7. Symbol BVGSO(1) Gate-source zener diode Parameter Gate-Source breakdown voltage Test conditions Igs=1mA (Open drain) Min 30 Typ. Max Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220/ DPAK Figure 2. Thermal impedance for TO-220/ DPAK Figure 3. Safe operating area for TO-247 Figure 4. Thermal impedance for TO-247 Figure 5. Output characteristics Figure 6. Transfer characteristics 6/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/16 Electrical characteristics Figure 13. Source-drain diode forward characteristics STB12NK80Z - STP12NK80Z - STW12NK80Z Figure 14. Normalized BVDSS vs temperature Figure 15. Maximum avalanche energy vs temperature 8/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Test circuit Package mechanical data 3 Test circuit Package mechanical data Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped Inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform 9/16 Package mechanical data STB12NK80Z - STP12NK80Z - STW12NK80Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Package mechanical data TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 11/16 Package mechanical data STB12NK80Z - STP12NK80Z - STW12NK80Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 13/16 Packing mechanical data STB12NK80Z - STP12NK80Z - STW12NK80Z 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 14/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Revision history 6 Revision history Table 8. Date 22-Jun-2004 28-Jan-2005 08-Sep-2005 31-Jul-2006 27-Apr-2007 Revision history Revision 2 3 4 5 6 Preliminary version Complete version Figure 1 and Figure 3 changed The document has been reformatted Modified Rds(on) value on Table 4 Changes 15/16 STB12NK80Z - STP12NK80Z - STW12NK80Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
Price & Availability of STB12NK80Z
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |