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| Switching Diode *150mW DO-34 * Glass silicon switching diodes * We declare that the material of product compliance with RoHS requirements. 1SS110 Product Characteristic Absolute Maximum Ratings(Ta=25C) Type 1SS110 VR(V) 35 IF(mA) 100 Pd(mW) 150 Topr() -20~+60 Tstg() -55~+125 Characteristics at Ta = 25C Parameter Symbol Forward Voltage at IF=100mA Leakage Current at VR=25V Breakdown Voltage at IR=10uA Capacitance at VR = 6V f =1MHZ Forward resistance at IF=2mA f=100MHz Inductance at f=250MHZ symbol VF IR V(BR)R CT rj Ls MIN 35 TYPE 3 MAX 1.0 0.1 1.2 0.9 Unit V uA V pF nH LESHAN RADIO COMPANY, LTD. Packing Taping / Box(T52) |
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