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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION With TO-220 package APPLICATIONS For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2N6098 2N6099 VCBO Collector-base voltage 2N6100 2N6101 2N6098 2N6099 VCEO Collector-emitter voltage 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25ae Open collector Open base 80 80 8 10 75 150 -65~150 ae ae V A W Open emitter 80 80 70 70 V CONDITIONS VALUE 70 70 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ae /W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N6098 2N6099 VCEO(SUS) Collector-emitter sustioning voltage 2N6100 2N6101 VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage 2N6098/6099 VBE Base-emitter on voltage 2N6100/6101 ICBO IEBO Collector cut-off current Emitter cut-off current 2N6098/6099 hFE DC current gain 2N6100/6101 fT Transition frequency 2N6098 2N6099 2N6100 2N6101 SYMBOL CONDITIONS MIN 70 70 TYP. MAX UNIT IC=0.1A ;IB=0 80 80 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=4A ; VCE=4V 1.3 IC=5A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150ae VEB=8V; IC=0 IC=4A ; VCE=4V 20 IC=5A ; VCE=4V IC=1A ; VCE=10V 0.8 80 0.5 2.0 1.0 1.3 3.5 V V V V mA mA MHz JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2N6098 2N6099 2N6100 2N6101 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) JMnic |
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