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 JMnic
Product Specification
Silicon PNP Power Transistors
DESCRIPTION With TO-126 package Complement to type 2SC1846 Low collector-emitter saturation voltage APPLICATIONS For low-frequency power amplification
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SA885
Absolute Maximun Ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE -45 -35 -5 -1 -1.5 1.2*1 PC Collector power dissipation TC=25ae 5* Tj Tstg Junction temperature Storage temperature
2
UNIT V V V A A
W
150 -55~150 ae
ae
Note) *1: Without heat sink *2: With a 100 A 100 A 2 mm A1 heat sink
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA;IB=0 IC=-10|I A ;IE=0 MIN -35 -45
2SA885
SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO ICEO IEBO hFE-1 hFE-2 COB fT
TYP.
MAX
UNIT V V
IC=-0.5A ;IB=-50mA VCB=-20V; IE=0 VCE=-20V; IB=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=50mA ; VCB=-10V,f=200MHz 85 50 20 200
-0.5 -0.1 -100 -10 340 |I |I |I
V A A A
30
pF MHz
hFE-1 Classifications Q 85-170 R 120-240 S 170-340
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA885
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA885
4
JMnic
Product Specification
Silicon PNP Power Transistors
2SA885
5


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