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SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB550 DESCRIPTION *With TO-66 package *Low collector saturation voltage APPLICATIONS *For low frequency power amplification *For low speed and power switching PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -70 -5 -5 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB550 SYMBOL TYP. MAX UNIT V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT Collector-base breakdown voltage IC=-1mA; IE=0 IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-0.1A ; VCE=-10V -100 V Collector-emitter breakdown voltage -70 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.0 V Base-emitter saturation voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 30 200 Transition frequency 5 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB550 Fig.2 outline dimensions 3 |
Price & Availability of 2SB550
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