View 2SK3365_4447366.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SMD Type
MOS Field Effect Transistor 2SK3365
IC MOSFET
Features
Super low on-state resistance: RDS(on)1 = 14 m RDS(on)2 = 21m RDS(on)3 = 29m MAX. (VGS = 10 V, ID = 15 A) MAX. (VGS = 4.5 V, ID = 15A)
+0.2 9.70-0.2
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
MAX. (VGS = 4 V, ID = 15A)
Low Ciss: Ciss = 1300 pF TYP. Built-in gate protection diode
+0.1 0.80-0.1
+0.15 0.50-0.15
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50-0.1
+0.25 2.65-0.1
+0.15 5.55-0.15
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TA=25 TC=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 30 20 30 120 1.0 36 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Symbol IDSS IGSS VGS(off) Yfs Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=15A VGS=10V,ID=15A Drain to source on-state resistance RDS(on) VGS=4.5V,ID=15A VGS=4.0V,ID=15A Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 24V, VGS = 10 V, ID = 30A ID=15A,VGS(on)=10V,RG=10 ,VDD=15V VDS=10V,VGS=0,f=1MHZ 1.5 8.0 2.0 16.0 11.5 15.2 18 1300 405 190 37 500 75 95 25 4.5 7.0 14 21 29 Min Typ Max 10 10 2.5 Unit A A V S m m m pF pF pF ns ns ns ns nC nC nC
3.80
www.kexin.com.cn
1

▲Up To Search▲

Price & Availability of 2SK3365

	To Download 2SK3365 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .