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| AP9985GM RoHS-compliant Product Advanced Power Electronics Corp. Low On-Resistance Fast Switching Speed Surface Mount Package SO-8 S S D D D D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID S G 40V 15m 10A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 40 20 10 8 48 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit /W Data and specifications subject to change without notice 1 200811132 AP9985GM Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge 2 2 Test Conditions VGS=0V, ID=250uA VGS=10V, ID=10A VGS=4.5V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=10A VDS=40V, VGS=0V VGS= 20V ID=10A VDS=20V VGS=4.5V VDS=20V ID=1A RG=3.3,VGS=10V RD=20 VGS=0V VDS=25V f=1.0MHz Min. 40 1 - Typ. 0.032 Max. Units 15 25 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss 35 14.7 7.1 6.8 11.5 6.3 28.2 12.6 1725 235 145 Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.3V Tj=25, IS=2.3A, VGS=0V Min. - Typ. - Max. Units 1.92 1.3 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9985GM 50 50 T A =25 o C 40 ID , Drain Current (A) 30 ID , Drain Current (A) 10V 6.0V 5.0V 4.5V T A = 150 C 40 o 10V 6.0V 5.0V 4.5V 30 V G = 4 .0 V 20 20 V G = 4.0 V 10 10 0 0 1 2 3 4 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.0 60 I D =10A T A =25 1.6 I D =10A V G =10V 50 Normalized RDS(ON) 2 4 6 8 10 RDS(ON) (m) 40 1.2 30 0.8 20 10 0.4 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.8 10 8 2.4 IS(A) 6 VGS(th) (V) 2.0 T j =150 o C 4 T j =25 o C 1.6 2 1.2 0 0.8 0 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature (oC) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9985GM 12 2400 f=1.0MHz I D =10A VGS , Gate to Source Voltage (V) 10 2000 8 C (pF) V DS =12V V DS =16V V DS =20V 1600 C iss 6 1200 4 800 2 400 C oss C rss 0 0 4 8 12 16 20 24 0 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 10 100us 1ms Normalized Thermal Response (Rthja) 0.2 ID (A) 0.1 0.1 0.05 1 10ms 100ms 0.02 0.01 PDM 0.01 t T Single Pulse 0.1 1s T A =25 o C Single Pulse DC Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthia=125 /W 0.01 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters SYMBOLS MIN NOM MAX 8 7 6 5 E1 E A A1 B c D E E1 e 1.35 0.10 0.33 0.19 4.80 5.80 3.80 1.55 0.18 0.41 0.22 4.90 6.15 3.90 1.27 TYP 0.254 TYP 1.75 0.25 0.51 0.25 5.00 6.50 4.00 1 2 3 4 e B G L 0.38 0.00 4.00 0.90 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 9985GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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