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  Datasheet File OCR Text:
 DC COMPONENTS CO., LTD.
R
BC238
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in driver stage of audio amplifiers.
TO-92
Pinning
1 = Collector 2 = Base 3 = Emitter
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCES VCEO VEBO IC PD TJ TSTG Rating 30 25 5 100 350 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCES BVCEO BVEBO ICES
(1)
Min 30 25 5 0.55 180 150 2%
Typ -
Max 15 0.2 0.8 1.05 0.83 0.7 800 4.5
Unit V V V nA V V V V V MHz pF
Test Conditions IC=100A, VEB=0 IC=2mA, IB=0 IE=100A, IC=0 VCB=30V, IE=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA IC=2mA, VCE=5V IC=2mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, IE=0, f=1MHz
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on) hFE fT
Cob 380s, Duty Cycle
Classification of hFE2
Rank Range B 180~460 C 300~800


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