 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. CHDTA125TKPT CURRENT 100 m A m p er e FEATURE * Small surface mounting type. (SOT-23) * High current gain. * Suitable for high packing density. * * * * Low colloector-emitter saturation. High saturation current capability. Internal isolated PNP transistors in one package. Built in bias resistor(R1=200k, Typ. ) SOT-23 .041 (1.05) .033 (0.85) (1) .110 (2.80) .082 (2.10) .066 (1.70) .119 (3.04) (3) CONSTRUCTION * One PNP transistors and bias of thin-film resistors in one package. (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) E B 2 1 CIRCUIT .045 (1.15) .033 (0.85) TR R1 3 C .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System . SYMBOL VCBO VCEO VEBO IC PC TSTG TJ RJ-S Note 1. Transistor mounted on an FR4 printed-circuit board. 2003-12 PARAMETER Coll ector -Base voltage Collector-Emitter voltage Emitter-Base voltage Coll ector current Collector Power dissipation Storage temperature Junction temperature Thermal resistance , Note 1 CONDITIONS -50 -50 -5 VALUE V V V mA UNIT -100 Tamb 25 OC, Note 1 200 -55 +150 -55 +150 junction - soldering point 140 mW O C O C C/W O RATING CHARACTERISTIC ( CHDTA125TKPT ) CHARA CTERISTICS Tamb = 25 C unless otherwise specied. SY MBOL BVCBO BVCEO BVEBO VCE(sat) ICBO IEBO hFE R1 fT PARAMETER Collector-Base breakdown voltage Emitter-Base breakdown voltage CONDITIONS IC= -50uA IE= -50uA MIN. -50.0 -50.0 - - - - - - 250 200 250 TY P . - - - -0.3 -0.5 -0.5 600 260 - K MHz MAX. V V V V uA uA UNIT Collector-Emitter breakdown voltage IC= -1mA -5.0 Collector-Emitter Saturation voltage IC= -0.5mA; IB= -0.05mA - Collector-Base current Emitter-Base current DC current gain Input resistor Transition frequency VCB= -50V VEB= -4V IC= -1mA; VCE= -5.0V IE=5mA, VCE= -10.0V f=100MHz = - - 100 140 - Not e 1.Pulse test: tp300uS; 0.02. |
Price & Availability of CHDTA125TKPT
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |