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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT Dual Silicon Transistor
VOLTAGE 12 Volts
APPLICATION
* Small Signal Amplifier .
CHEMT18PT
CURRENT 0.5 Ampere
FEATURE
* Small surface mounting type. (SOT-563) * Low saturation voltage VCE(sat)=-0.25V(max.)(IC=200mA) * Low cob. Cob=6.5pF(Typ.) * PC= 150mW (Total),120mW per element must not be exceeded. * High saturation current capability. * Two the 2SA2018 in one package. * PNP Silicon Transistor
0.9~1.1 0.15~0.3
(3) (4)
SOT-563
(1)
(5)
0.50 0.50
1.5~1.7
MARKING
* T8
1.1~1.3
0.5~0.6 0.09~0.18
6 4
CIRCUIT
1.5~1.7
1
3
Dimensions in millimeters
SOT-563
2SA2018 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICP Pc TSTG TJ Note 1. Single Pulse Pw=1ms 2. 120mW per element must not be exceeded Each teminal mounted on a recommended land.
2004-07
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage
CONDITIONS - - - -
MIN.
MAX. -15 -12 -6 -500 -1000 150 +150 150
UNIT V V V mA mW
O
DC Output current power dissipation Storage temperature Junction temperature
NOTE.1 NOTE.2
- - -55 -
C C
O
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL PARAMETER CONDITIONS IC=-1mA IC=-10uA IE=-10uA VCB=-15V VEB=-6V VCE=-2V,IC=-10mA IC=-200mA,IB=-10mA VCB=-10V,IE=0mA,f=1MHZ VCE=-2V,IE=10mA,f=100MHZ MIN. -12 -15 -6 - - 270 - - - TYP. - - - - - - -100 6.5 260 - - - -100 -100 680 -250 - - MAX. V V V nA nA - mV pF MHz UNIT
BVCEO Collector-emitter breakdown voltage BVCBO Collector-base breakdown voltage BVEBO ICBO IEBO hFE VCE(sat) Cob fT Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency
Note 1.Pulse test: tp300uS; 0.02.
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 Typical Electrical Characteristics
Fig.1 Ground emitter propagation characteristics
1000
Fig.2 DC current gain vs. collector current
1000 Ta=125 C 25 C
DC CURRENT GAIN : hFE
O O
COLLECTOR CURRENT : IC(mA)
VCE=2V pulsed
VCE=2V pulsed
-40 C 100
O
100
10
Ta=125 C Ta=25 C
O O O
10
Ta=-40 C
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE(V)
COLLECTOR CURRENT : IC(mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage vs. collector current ( I )
Ta=25 C pulsed
O
Fig.4 Collector-emitter saturation voltage vs. collector current ( II )
1000 IC/IB=20 pulsed
100 Ta=125 C Ta=25 C 10 Ta=-40 C
O O O
100
Ta=125 C O Ta=25 C O Ta=-40 C
O
10
1 1 10 100 1000
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage vs. collector current
BASER SATURATION VOLTAGE : VBE(sat)(mV)
Fig.6 Gain bandwidth product vs. collector current
1000
TRANSITION FREQUENCY : fT(MHZ)
1000
IC/IB=20 pulsed Ta=-40OC O Ta=25 C O Ta=125 C
VCE=2V O Ta=25 C pulsed
100
100
10
10
1 1 10 100 1000
1 1 10 100 1000
COLLECTOR CURRENT : IC(mA)
EMITTER CURRENT : IE(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
1000 IE=0A f=1MHZ O Ta=25 C
EMITTER INPUT CAPACITANCE : Cib (pF)
100 Cib 10 Cob
1 1 10 100 1000
COLLECTOR TO BASE VOLTAGE : VCB(V)

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