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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 75 Volts
APPLICATION
* Servo motor control. * Power MOSFET gate drivers. * Other switching applications.
CHM80N75NPT
CURRENT 80 Ampere
FEATURE
* Small package. (D2PAK) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability.
0.420(10.67) 0.380(9.69) 0.245(6.22) MIN.
3
D2PAK
0.190(4.83) 0.160(4.06) 0.055(1.40) 0.045(1.14) 0.055(1.40) 0.047(1.19)
1 3 2
0.575(14.60) 0.360(9.14)
* N-Channel Enhancement
0.625(15.88)
CONSTRUCTION
0.320(8.13)
0.110(2.79) 0.090(2.29) 0.100(2.54) 0.095(2.41) 0.037(0.940) 0.027(0.686)
0.025(0.64) 0.018(0.46) 0.110(2.79) 0.080(2.03)
CIRCUIT
(1) G
D (3)
1 Gate 2 Source 3 Drain ( Heat Sink )
S (2)
Dimensions in inches and (millimeters)
D2PAK
Absolute Maximum Ratings
Symbol Parameter
TA = 25C unless otherwise noted
CHM80N75NPT
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous
75
V V
20
80
ID - Pulsed PD TJ TSTG
(Note 3)
A 320 200 -55 to 175 -55 to 175 W C C
Maximum Power Dissipation at Tc = 25 C Operating Temperature Range Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 C/W
2008-03
ELECTRICAL CHARACTERISTIC ( CHM80N75NPT )
Electrical Characteristics T
Symbol Parameter
A
= 25C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS IDSS I GSSF I GSSR
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage
VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V
75 1 +100 -100
V A nA nA
ON CHARACTERISTICS
(Note 2)
VGS(th) RDS(ON) g FS
Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance
VDS = VGS, ID = 250 A VGS=10V, ID=40A VDS =15V, ID = 40A
2
4
V m S
10 45
13
Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz 3550 580 40 pF
SWITCHING CHARACTERISTICS (Note 4)
Qg Qgs Q gd ton tr toff tf
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time
VDS=60V, ID=75A VGS=10V V DD= 37.5V I D = 45A , VGS = 10 V RGEN= 4.7
79.3 20.6 25.9 24 5 61 18
105.5 nC
48 10 122 36 nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS VSD
Drain-Source Diode Forward Current
(Note 1) (Note 2)
75 1.5
A V
Drain-Source Diode Forward Voltage IS = 75A , VGS = 0 V
RATING CHARACTERISTIC CURVES ( CHM80N75NPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
50 120
Figure 2. Transfer Characteristics
V G S =1 0 , 9 , 8 , 7 V
40 100
I D , DRAIN CURRENT (A)
VG S =6 . 0 V
30
I D , DRAIN CURRENT (A)
75
20
50
TJ=-55C
25 J=125C T
10
VG S =5 . 0 V
TJ=25C
5.0
0
0
1.5 1.0 0.5 V DS , DRAIN-TO-SOURCE VOLTAGE (V)
2.0
0
0
3.0 4.0 2.0 1.0 VGS , GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10 VDS=60V ID=75A 2.6
Figure 4. On-Resistance Variation with Temperature
VGS=10V ID=3.9A 2.2
VGS , GATE TO SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
8
R DS(on) , NO RMALIZED
1.8
6
1.4
4
1.0
2
0.6
0 0 15 30 45 60 Qg , TOTAL GATE CHARGE (nC) 75 90
0.2 -100
-50
0 50 100 TJ , JUNCTION T EMPERATURE (C)
150
200
Figure 5. Gate Threshold Variation with Temperature
1.3 1.2 VDS=VGS ID=250uA
Vth , NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1 1.0 0.9 0.8
0.7 0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION T EMPERATURE (C)
125
150

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