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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT PNP SILICON Transistor VOLTAGE 80 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT4033XPT CURRENT 1 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Suitable for high packing density. * High saturation current capability. * Voltage controlled small signal switch. 4.6MAX. 1.7MAX. SC-62/SOT-89 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 1 1 Base 2 3 CIRCUIT 2 Collector ( Heat Sink ) 3 Emitter 0.8MIN. * PNP SILICON Transistor 4.6MAX. CONSTRUCTION 1 B 2 C 3 E Dimensions in millimeters SC-62/SOT-89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-7 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - - Tamb 25 C; note 1 - MIN. MAX. 80 80 5.0 1.0 1.5 1.2 +150 150 +150 V V V A A UNIT W C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHT4033XPT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V IC = 0; VEB = 5 V IC = 0.1 mA; V CE = 5V IC = 100 mA; VCE = 5V IC = 500 mA; VCE =5V IC = 1.0A; VCE = 5V - - 75 100 70 25 - 300 - - MIN. MAX. 50 10 UNIT nA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 357 UNIT K/W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency IC = 150 mA; IB = 15 m A -500 mA; IB = 50 m A IC = IC =150 mA; IB =15 mA -500 mA; IB = 50 m A IC = IE = ie = 0; VCB = 1 0 V; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 50 mA; VCE = 1 0 V; f = 1.0 MHz - - - - - - 100 0.15 0.5 0.9 1.1 20 110 - V V V V pF pF MHz VBEsat Cob C ib fT |
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