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| SMD Type N-Channel Qg, Fast Switching WFETTM KI4390DY IC IC Features Extremely Low Qgd WFET Technology for Switching Losses TrenchFETTM Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 ) TA = 25 TA = 70 Pulsed Drain Current Continuous Source Current ( Diode Conduction)* Maximum Power Dissipation * TA = 25 TA = 70 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 2.7 3 1.9 -55 to 150 Symbol VDS VGS ID 12.5 10 20 1.3 1.4 0.9 W 10 secs 30 20 8.5 6.8 A Steady State Unit V www.kexin.com.cn 1 SMD Type KI4390DY Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient * Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1" FR4 Board. t 10 sec Symbol RthJA RthJF Typical 32 68 15 Maximum 42 90 20 /W Unit IC IC Steady-State Steady-State Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Drain Source On State Resistance* Forward Transconductanceb Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test :Pulse width Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.7 A, di/dt = 100 A/ s VDD=15V,RL=15 ,ID=1A,VGEN=10V,RG=6 VDS = 15 V, VGS = 4.5 V, ID = 12.5 A Testconditons VDS = VGS, ID = 250 VDS = 0 V, VGS = A Min 0.8 Typ Max 2.8 100 1 A VDS = 24 V, VGS = 0 V, TJ = 55 VDS 5 V, VGS = 10 V 30 0.0075 0.0095 0.0105 0.0135 38 0.7 10 3.5 2.1 0.8 16 6 43 14 35 30 12 70 25 60 ns ns 15 nC S V 5 A Unit V nA 20 V VDS = 24 V, VGS = 0 V VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 10.5 A VDS = 15 V, ID = 12.5 A IS = 2.7 A, VGS = 0 V 300 s,duty cycle 2% 2 www.kexin.com.cn |
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