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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION *High Power Dissipation *Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) *Complement to Type 2SC3280 APPLICATIONS *Power amplifier applications *Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature -1.2 A PC 120 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1301 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -8.0A; IB= -0.8A -2.5 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -5 A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 A hFE-1 DC Current Gain IC= -1A; VCE= -5V 55 160 hFE-2 DC Current Gain IC= -6A; VCE= -5V 35 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 480 pF fT Current-Gain--Bandwidth Product IC=-1A ; VCE= -5V 30 MHz hFE-1 Classifications R 55-110 O 80-160 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SA1301 |
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