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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Low Ferquency PNP Transistor VOLTAGE 12 Volts APPLICATION * For switching,for muting. 2SA2119PT CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-23) * A collector current is large. * Collector saturation voltage is low. VCE(sat)<=250mA At Ic=200mA/IB=10mA .110 (2.80) .082 (2.10) .119 (3.04) SOT-23 .041 (1.05) .033 (0.85) (1) .066 (1.70) CONSTRUCTION * PNP Silicon Transistor (3) (2) .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) .019 (0.50) 2 Dimensions in inches and (millimeters) SOT-23 MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) RATINGS Collector - Base Voltage Collector - Emitter Voltage Collector Current DC CONDITION Open Emitter Open Base SYMBOL VCBO VCEO IC ICM MIN. MAX. -15 -12 -500 -1000 UNITS Volts Volts mAmps mAmps Peak Collector Current Total Power Dissipation TA 25OC; Note 1 PTOT - 150 mW Storage Temperature Junction Temperature Operating Ambient Temperature TSTG TJ TAMB -55 -55 +150 +150 +150 o C C C o o Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2004-12 RATING CHARACTERISTICS ( 2SA2119PT ) THERMAL CHARACTERISTICS CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO BVCBO BVCEO BVEBO hFE VCEsat Cob fT Note 1. Pulse test: tp 300 s; 0.02. PARAMETER collector cut-off current VCB=-15V CONDITIONS MIN. - -15 -12 -6 270 - - - Typ. - - - - - -100 6.5 260 MAX. -0.1 - - - 680 -250 - - mV pF MHz UNIT uA V V V collector-base breakdown voltage IC =-10uA collector-emitter breakdown voltage IC =-1mA emitter-base breakdown voltage DC current transfer ratio collector-emitter saturation voltage collector output capacitance transition frequency IE =-10uA VCE=-2V , IC=-10mA IC/IB=-200mA/-10mA IE = 0; VCB = -10V ; f = 1 MH z IE = -10 mA; VCE= - 2V; f = 30 MHz RATING CHARACTERISTIC CURVES ( 2SA2119PT ) 1000 VCE=2V 1000 500 VCE=2V 1000 500 COLLECTOR CURRENT : IC (mA) 500 200 100 50 20 10 5 2 1 0 Ta=125C Ta=25C Ta= -40C 200 100 50 20 10 5 2 Ta=125C Ta=25C Ta= -40C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) IC / IB=20 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 Ta=125C Ta=25C Ta= -40C 0.5 1.0 1.5 1 1 2 5 10 20 50 100 200 500 1000 1 1 2 5 10 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 DC Current Gain vs. Collector Current BASER SATURATION VOLTAGE : VBE (sat) (mV) Fig.3 Collector-Emitter Saturation Voltage vs. Collector Current () 1000 1000 500 TRANSITION FREQUENCY : fT (MHz) Ta=25C 10000 5000 2000 1000 500 200 100 50 20 10 1 2 5 10 20 Ta= -40C Ta=25C Ta=125C IC / IB=20 500 200 100 50 20 10 5 2 1 1 2 5 10 20 VCE=2V Ta=25C COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 IC / IB=50 IC / IB=20 IC / IB=10 50 100 200 500 1000 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current () Fig.5 Base-Emitter Saturation Voltage vs.Collecter Current Fig.6 Gain Bandwidth Product vs. Emitter Current |
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