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| JMnic Product Specification Silicon PNP Power Transistors 2SB953 2SB953A DESCRIPTION With TO-220Fa package Complement to type 2SD1444/1444A High speed switching Low collector saturation voltage APPLICATIONS For low-voltage switching PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings(Ta=25ae ) SYMBOL PARAMETER 2SB953 VCBO Collector-base voltage 2SB953A 2SB953 VCEO Collector-emitter voltage 2SB953A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ae ae Open collector Open base -40 -5 -7 -12 2 W V A A Open emitter -50 -20 V CONDITIONS VALUE -40 V UNIT 1 JMnic Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SB953 IC=-10mA IB=0 2SB953A IC=-5A ;IB=-0.16A IC=-5A; IB=-0.16A VCB=-40V; IE=0 CONDITIONS 2SB953 2SB953A SYMBOL MIN -20 TYP. MAX UNIT VCEO Collector-emitter voltage V -40 -0.6 -1.5 V V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB953 2SB953A ICBO Collector cut-off current -50 VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-0.5A; VCE=-10V,f=10MHz f=1MHz ; VCB=-10V 45 90 150 140 260 -50 |I |I A IEBO hFE-1 hFE-2 fT COB Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance A MHz pF Switching times ton ts tf Trun-on time Storage time Fall time IC=-2A IB1=-66mA, IB2=66mA 0.1 0.5 0.1 |I |I |I s s s hFE-2 Classifications Q 90-180 P 130-260 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB953 2SB953A Fig.2 Outline dimensions (unindicated tolerance: A 0.15 mm) 3 JMnic Product Specification Silicon PNP Power Transistors 2SB953 2SB953A 4 JMnic Product Specification Silicon PNP Power Transistors 2SB953 2SB953A 5 |
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