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| JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 900 600 7 3 5 1 30 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification Silicon NPN Power Transistors 2SC4804 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 600 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=0.8A ; VCE=5V 10 2 JMnic Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4804 Fig.2 Outline dimensions (unindicated tolerance:A 0.20 mm) 3 |
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