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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT9013PT CURRENT 0.5 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * Surface mount package. (SOT-23) * Suitable for high packing density. CONSTRUCTION .110 (2.80) .082 (2.10) (1) *NPN Silicon Transistor .066 (1.70) .119 (3.04) (3) (2) MARKING * HFE(L):J3 * HFE(H):J2 * HFE(J):J1 .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT (1) B C (3) .045 (1.15) .033 (0.85) E(2) .019 (0.50) Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-8 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 - MIN. MAX. 40 25 5 500 300 +150 150 +150 V V V UNIT mA mW C C C -55 - -55 RATING CHARACTERISTIC CURVES ( CHT9013PT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage transition frequency CONDITIONS VCB = 40V,IE=0 VCE=20V,IB=0 VEB=5V ,IC=0 IC = 50 mA; VCE = 1V IC = 500 mA; VCE =1V IC = 5 00 mA; IB = 50 m A IC = 5 00 mA; IB = 50 m A IC = 20 mA; VCE = 6 V; f = 30MHz MIN. - - - 120 40 - - MAX. 0.1 0.1 0.1 400 - 0.6 1.2 - V V MHz UNIT uA uA uA 150 Note : 1. Pulse test: tp 300uSec; 0.02. 2. hFE: Classification L: 120 to 200, H: 200 to 350, J: 300 to 400 RATING CHARACTERISTIC CURVES ( CHT9013PT ) Typical Electrical Characteristics FIG. 1 - Static Characteristic 20 FIG. 2 - DC collector current 1000 IB=160uA IB=140uA hFE,DC CURRENT GAIN IB=120uA IB=100uA IB=80uA VCE=1V IC (mA),COLLECTOR CURRENT 18 16 14 12 10 8 6 4 100 IB=60uA IB=40uA IB=20uA 10 2 0 0 10 20 30 40 50 1 1 10 100 1000 10000 VCE(V),COLLECTOR-EMITTER VOLTAGE IC(mA),COLLECTOR CURRENT FIG. 3 - Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(SAT),VCE(SAT) (mV),SATURATION VOLTAGE 1000 FIG. 4 - Current Gain Bandwidth Product fT(MHZ),CURRENT GAIN BANDWIDTH PRODUCT 1000 IC=10IB VCE=6V 100 100 VBE(sat) 10 VCE(sat) 10 1 1 10 100 1000 10000 1 1 10 100 1000 10000 IC(mA),COLLECTOR CURRENT IC(mA),COLLECTOR CURRENT |
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