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| SMD Type NPN Switching Transistor KMBT2222A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm o Features +0.1 2.4-0.1 nHigh current (max. 600 mA) nLow voltage (max.40 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base +0.1 0.38-0.1 2.Emitter 3.collector o Absolute Maximum Ratings Ta = 25ae Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation TaU ae 25 Thermal resistance from junction to ambient Operating and Storage and Temperature Range Symbol VCBO VCEO VEBO IC Ptot ReJA Tj, TSTG Rating 75 40 6 600 300 417 -65 to +150 Unit V V V mA mW K/W ae 0-0.1 www.kexin.com.cn 1 SMD Type KMBT2222A o Electrical Characteristics Ta = 25ae Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector cutoff current Emitter cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Testconditons IC = 10|I IE = 0 A, IC = 10 mA, IB = 0 A, IC = 10 |I IC = 0 IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 125 ae IC = 0; VEB = 3 V IC = 0.1 mA; VCE = 10 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V DC current gain hFE IC = 10 mA; VCE = 10 V; Ta = -55 ae IC= 150 mA; VCE = 10 V IC = 150 mA; VCE = 1 V IC = 500 mA; VCE = 10 V collector-emitter saturation voltage VCEsat IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA base-emitter saturation voltage Delay time Rise time Storage time Fall time Output Capacitance Input Capacitance Noise Figure Transition frequency VBEsat td tr ts tf Cobo Cibo NF fT IC = 150 mA; IB = 15 mA IC = 500 mA; IB = 50 mA IB1 = 15 mA, IC = 150 mA, VCC = 30V, VBE = -0.5 V IB1 = IB2 = 15 mA, IC = 150 mA, VCC = 30V VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10 V, IC = 100 |I A,RS = 1 k| f = 1 kHz , IC = 20 mA; VCE = 20 V; f = 100 MHz 300 0.6 35 50 75 35 100 50 40 Min 75 40 6 Transistors Typ Max Unit V V V 10 10 10 nA |I A nA 300 300 1 1.2 2 15 25 200 60 8 25 4 mV V V V ns ns ns ns pF pF dB MHz o Marking Marking 1P 2 www.kexin.com.cn SMD Type KMBT2222A Transistors 1000 350 PD, POWER DISSIPATION (mW) 250 200 150 100 50 hFE, DC CURRENT GAIN 300 TA = 125C 100 TA = -25C TA = +25C 10 VCE = 1.0V 0 0 25 50 75 100 125 150 175 200 1 0.1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Typical DC Current Gain vs Collector Current TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 30 VCE COLLECTOR-EMITTER VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 100 IC = 300mA IC = 30mA IC = 1mA IC = 10mA IC = 100mA 20 10 Cibo CAPACITANCE (pF) 5.0 Cobo 1.0 0.1 1.0 10 50 REVERSE VOLTS (V) Fig. 3 Typical Capacitance IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region www.kexin.com.cn 3 |
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