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MMBTSC3928
NPN Silicon Epitaxial Planar Transistor
for low frequency amplification applications
The transistor is subdivided into four groups Q, R, S and T, according to its DC current gain.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Q R S T Symbol hFE hFE hFE hFE hFE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) fT Cob NF Min. 120 180 270 390 70 50 50 6 Typ. 200 4 Max. 270 390 560 820 0.1 0.1 0.3 15 Unit V V V A A V MHz pF dB Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 50 50 6 200 200 150 - 55 to + 150 Unit V V V mA mW
O
C C
O
at VCE = 6 V, IC = 0.1 mA Collector Base Breakdown Voltage at IC = 100 A Collector Emitter Breakdown Voltage at IC = 100 A Emitter Base Breakdown Voltage at IC = 100 A Collector Cutoff Current at VCB = 50 V Emitter Cutoff Current at VEB = 4 V Collector Emitter Saturation Voltage at IC = 100 mA, IB = 10 mA Gain Bandwidth Product at VCE = 6 V, -IE = 10 mA Collector Output Capacitance at VCB = 6 V, f = 1 MHz Noise Figure at VCE = 6 V, -IE= 0.1 mA, f = 1 KHz, RG = 2 K
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 05/08/2006
MMBTSC3928
Power Dissipation vs Ambient Temperature
300
Power Dissipation: Ptot (mW)
250
200
150
100
50 0 0 25 50 75 100
O
125
150
Ambient Temperature: Ta ( C)
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 05/08/2006

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