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STFV3N150 , STFW3N150 STP3N150, STW3N150
N-channel 1500 V, 6 2.5 A, PowerMESHTM Power MOSFET , TO-220, TO-220FH, TO-247, TO-3PF
Features
Type STFV3N150 STFW3N150(1) STP3N150 STW3N150 VDSS 1500 V 1500 V 1500 V 1500 V RDS(on) max <9 <9 <9 <9 ID Pw
3 1 2
2.5 A 30 W 2.5 A 83 W 2.5 A 140 W 2.5 A 140 W
1
2
3
TO-220
TO-220FH
1. All data which refers solely to the TO-3PF package is preliminary
100% avalanche tested Intrinsic capacitances and Qg minimized High speed switching Fully isolated TO-3PF and TO-220FH plastic packages Creepage distance path is 5.4 mm (typ.) for TO-3PF Creepage distance path is > 4 mm for TO-220FH Figure 1.
1
2
3
3 1 2
TO-247
TO-3PF
Internal schematic diagram
Application
Switching applications
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company's proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Table 1. Device summary
Order codes STFV3N150 STFW3N150 STP3N150 STW3N150 February 2009 Marking 3N150 3N150 3N150 3N150 Rev 6 Package TO-220FH TO-3PF TO-220 TO-247 Packaging Tube Tube Tube Tube 1/16
www.st.com 16
Contents
STFV3N150, STFW3N150, STP3N150, STW3N150
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STFV3N150, STFW3N150, STP3N150, STW3N150
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(2)
Absolute maximum ratings
Value Parameter TO-220,TO-247 TO-220FH TO-3PF Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Derating factor 1.12 2.5 1.6 10 140 1500 30 2.5 (1) 1.6 10
(1) (1)
Unit V V 2.5(1) 1.6 10
(1) (1)
A A A W V W/C C C
PTOT VISO
30 2500 0.24 -50 to 150 150
83 TBD 0.67
Tstg Tj
Storage temperature Max. operating junction temperature
1. Limited by maximum temperature allowed 2. Pulse width limited by safe operating area
Table 3.
Symbol Rthj-case Rthj-amb Tj
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 TO-220 TO-247 TO-220FH TO-3PF Unit 0.89 50 300 4.17 62.5 1.5 50 C/W C/W C/W
Table 4.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max value 2.5 450 Unit A mJ
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Electrical characteristics
STFV3N150, STFW3N150, STP3N150, STW3N150
2
Electrical characteristics
(Tcase = 25 C unless otherwise specified) Table 5.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on
On /off states
Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. 1500 10 500 100 3 4 6 5 9 Typ. Max. Unit V A A nA V
VDS = Max rating Zero gate voltage drain current (VGS = 0) VDS = Max rating, TC=125 C Gate-body leakage current (VDS = 0) VGS = 30 V
Gate threshold voltage VDS = VGS, ID = 250 A Static drain-source on resistance VGS = 10 V, ID = 1.3 A
Table 6.
Symbol gfs (1) Ciss Coss Crss
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 30 V, ID = 1.3 A Min. Typ. 2.6 939 102 13.2 100 Max. Unit S pF pF pF pF
VDS = 25 V, f = 1 MHz, VGS = 0
Coss eq. (2) Equivalent output capacitance Rg Qg Qgs Qgd Gate input resistance Total gate charge Gate-source charge Gate-drain charge
VDS=0 to 1200 V, VGS = 0 f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 1200 V, ID = 2.5 A, VGS = 10 V (see Figure 19)
4 29.3 4.6 17
nC nC nC
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STFV3N150, STFW3N150, STP3N150, STW3N150
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 750 V, ID = 1.25 A, RG = 4.7 , VGS = 10 V (see Figure 18) Min. Typ. 24 47 45 61 Max Unit ns ns ns ns
Table 8.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 2.5 A, VGS = 0 ISD = 2.5 A, di/dt = 100 A/s VDD= 60 V (see Figure 20) ISD = 2.5 A, di/dt = 100 A/s VDD= 60 V, Tj = 150 C (see Figure 20) 410 2.4 11.7 540 3.3 12.3 Test conditions Min. Typ. Max Unit 2.5 10 1.6 A A V ns C A ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STFV3N150, STFW3N150, STP3N150, STW3N150
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4.
Safe operating area for TO-220FH
Figure 5.
Thermal impedance for TO-220FH
Figure 6.
Safe operating area for TO-247
Figure 7.
Thermal impedance for TO-247
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STFV3N150, STFW3N150, STP3N150, STW3N150 Figure 8. Output characteristics Figure 9.
Electrical characteristics Transfer characteristics
Figure 10. Normalized BVDSS vs. temperature Figure 11. Static drain-source on resistance
Figure 12. Gate charge vs. gate-source voltage
Figure 13. Capacitance variations
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Electrical characteristics Figure 14. Normalized gate threshold voltage vs. temperature
STFV3N150, STFW3N150, STP3N150, STW3N150 Figure 15. Normalized on resistance vs. temperature
Figure 16. Source-drain diode forward characteristics
Figure 17. Maximum avalanche energy vs Tj
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STFV3N150, STFW3N150, STP3N150, STW3N150
Test circuits
3
Test circuits
Figure 19. Gate charge test circuit
Figure 18. Switching times test circuit for resistive load
Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
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Package mechanical data
STFV3N150, STFW3N150, STP3N150, STW3N150
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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STFV3N150, STFW3N150, STP3N150, STW3N150
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Package mechanical data
STFV3N150, STFW3N150, STP3N150, STW3N150
TO-247 Mechanical data
mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 14.80 4.30 Typ Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75
Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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STFV3N150, STFW3N150, STP3N150, STW3N150
Package mechanical data
TO-220FH (Fully plastic High voltage) MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 L8 L9 15.9 9 14.5 2.4 28.6 9.8 3.4 16.4 9.3 15 0.626 0.354 0.570 0.094 4.4 2.5 2.5 0.45 0.75 1.3 1.3 4.95 2.4 10 16 30.6 10.6 1.126 0.385 0.134 0.645 0.366 0.590 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.8 1.8 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.051 0.051 0.195 0.094 0.393 0.630 1.204 0.417 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.070 0.070 0.204 0.106 0.409
P011W
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Package mechanical data
STFV3N150, STFW3N150, STP3N150, STW3N150
TO-3PF mechanical data
DIM. A C D D1 E F F2 G G1 H L L2 L3 L4 L5 L6 L7 N R Dia mm. typ
min. 5.30 2.80 3.10 1.80 0.80 0.65 1.80 10.30 15.30 9.80 22.80 26.30 43.20 4.30 24.30 14.60 1.80 3.80 3.40
max. 5.70 3.20 3.50 2.20 1.10 0.95 2.20 11.50 15.70 10.20 23.20 26.70 44.40 4.70 24.70 15 2.20 4.20 3.80
5.45 10
7627132_C
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STFV3N150, STFW3N150, STP3N150, STW3N150
Revision history
5
Revision history
Table 9.
Date 12-Jan-2007 17-Apr-2007 14-May-2007 29-Aug-2007 09-Apr-2008 13-Feb-2009
Document revision history
Revision 1 2 3 4 5 6 First release Added new value on Table 6. The document has been reformatted RDS(on) value changed, updated Figure 15 Added new package: TO-3PF Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings) Changes
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STFV3N150, STFW3N150, STP3N150, STW3N150
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