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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD380 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed APPLICATIONS *Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous ww w scs .i 1500 1500 700 5 5 7 3.5 V V V .cn mi e V A ICM Collector Current-Peak A IBM Base Current-Peak Collector Power Dissipation @ TC90 Junction Temperature A PC 50 W TJ 130 Tstg Storage Temperature Range -65~130 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD380 MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 10 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.6 V VCB= 750V ; IE= 0 ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 100 A hFE DC Current Gain IC= 5A ; VCE= 10V tf Fall Time tstg Storage Time w w w. IC= 5A, IBend= 1.5A, LB= 5H .cn mi cse is 5 1 mA 15 0.9 s 11 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD380
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