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DU28200M
RF Power MOSFET Transistor 200W, 2-175MHz, 28V
Features
M/A-COM Products Released; RoHS Compliant
Package Outline
* * * * *
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25 C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG JC Rating 65 20 20 389 200 -65 to +150 0.45 Units V V A W C C C/W
LETTER DIM MILLIMETERS MIN 30.35 23.65 13.72 9.63 9.40 9.40 5.59 18.80 9.40 3.12 1.47 2.39 5.03 .05 MAX 30.61 23.90 14.22 9.88 9.65 9.65 5.84 19.30 9.65 3.38 1.57 2.74 5.69 .13 INCHES MIN 1.195 .931 .540 .379 .370 .370 .220 .740 .370 .123 .058 .094 .198 .002 MAX 1.205 .941 .560 3.89 .389 .389 .230 .760 .380 .133 .062 .108 .224 .005
TYPICAL DEVICE IMPEDANCE
F (MHz) 30 100 150 175 200 ZIN () 2.7 - j4.8 1.6 - j3.0 1.5 - j2.0 1.6 - j1.0 1.8 - j0.5 ZLOAD () 7.2 - j1.9 5.25 - j1.4 5.0 - j0.7 5.2 - j0.6 5.5 - j0.5
A B C D E F G H J K L
VDD = 28V, IDQ = 1000mA, POUT = 200 W
ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C
Parameter Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Symbol BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS GP D VSWR-T Min 65 2.0 2.5 13 55 Max 5.0 5.0 6.0 225 200 40 10:1 Units V mA A V S pF pF pF dB % -
M N P
Test Conditions VGS = 0.0 V , IDS = 25.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 500.0 mA VDS = 10.0 V , IDS = 5.0A , VGS = 1.0V, 80 s Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDD = 28.0 V, IDQ = 1000 mA, POUT = 200.0 W F =175 MHz VDD = 28.0 V, IDQ = 1000 mA, POUT = 200.0 W F =175 MHz VDD = 28.0 V, IDQ = 1000 mA, POUT = 200.0 W F =175 MHz
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28200M
RF Power MOSFET Transistor 200W, 2-175MHz, 28V
Typical Broadband Performance Curves GAIN VS FREQUENCY VDD=28 V IDQ=100 mA POUT=200 W EFFICIENCY VS FREQUENCY VDD=28 V IDQ=1000 mA POUT=200 W
M/A-COM Products Released; RoHS Compliant
30
80
EFFICIENCY (%)
GAIN (dB)
70
20
60
10 25 50 100 150 200
50 25 50 100 150 200 FREQUENCY (MHz) FREQUENCY (MHz)
300 POWER OUTPUT (W) 250 200 150 100 50 0
POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =600 mA
30MHz 100MHz 175MHz
0.5
1
2
3
4
5
POWER INPUT (W)
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28200M
RF Power MOSFET Transistor 200W, 2-175MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products Released; RoHS Compliant
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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