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Freescale Semiconductor Technical Data
Document Number: MRF7S18125BH Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 125 Watts CW, f = 1930 MHz. Power Gain -- 16.5 dB Drain Efficiency -- 55% GSM EDGE Application * Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 57 Watts Avg., Full Frequency Band (1930 - 1990 MHz). Power Gain -- 17 dB Drain Efficiency -- 39% Spectral Regrowth @ 400 kHz Offset = - 60 dBc Spectral Regrowth @ 600 kHz Offset = - 74 dBc EVM -- 2.6% rms * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 125 Watts CW Output Power * Typical Pout @ 1 dB Compression Point ] 140 Watts CW Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S18125BHR3 MRF7S18125BHSR3
1930- 1990 MHz, 125 W CW, 28 V GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465 - 06, STYLE 1 NI - 780 MRF7S18125BHR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S18125BHSR3
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 81C, 125 W CW Case Temperature 81C, 71 W CW Symbol RJC Value (2,3) 0.31 0.35 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S18125BHR3 MRF7S18125BHSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 316 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1100 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.16 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Power Gain Drain Efficiency Input Return Loss Crss Coss Ciss -- -- -- 1.15 673 309 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4 0.1 1.9 2.7 5.3 0.2 2.7 -- 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW, f = 1930 MHz Gps D IRL 15 51 -- 16.5 55 - 12 18 -- -7 dB % dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S18125BHR3 MRF7S18125BHSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point IMD Symmetry @ 125 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 125 W CW Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 125 W CW Average Group Delay @ Pout = 125 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 125 W CW, f = 1960 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 140 10 Max -- -- Unit W MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1930 - 1990 MHz Bandwidth
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
35 1.02 3.3 2.49 6.7 0.016 0.01
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 57 W Avg., 1930 - 1990 MHz EDGE Modulation Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 17 39 2.6 - 60 - 74 -- -- -- -- -- dB % % rms dBc dBc
MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS
Z13 VSUPPLY + R2 C1 C8 Z12 C9 C2 C3 C6
R3 RF INPUT
Z6 Z7 Z8 C14 C16 Z9 C18 Z10 C10 C15 Z14 C17 RF OUTPUT Z11
Z1 C7
Z2
Z3
Z4
Z5
DUT C12 C13
C11
C4
C5
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.227 x 0.083 Microstrip 0.697 x 0.083 Microstrip 0.618 x 0.083 Microstrip 0.568 x 1.000 Microstrip 0.092 x 1.000 Microstrip 0.095 x 1.000 Microstrip 0.565 x 1.000 Microstrip
Z8 Z9 Z10 Z11 Z12 Z13, Z14 PCB
0.200 x 0.083 Microstrip 1.045 x 0.083 Microstrip 0.071 x 0.083 Microstrip 0.227 x 0.083 Microstrip 1.280 x 0.080 Microstrip 0.760 x 0.080 Microstrip Taconic TLX - 8 RF35, 0.031, r = 2.55
Figure 1. MRF7S18125BHR3(HSR3) Test Circuit Schematic
Table 5. MRF7S18125BHR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2, C3, C4, C5 C6 C7, C8, C9, C10, C11 C12, C13 C14, C15, C16, C17, C18 R1, R2 R3 Description 1 F, 50 V Chip Capacitor 4.7 F, 50 V Chip Capacitors 220 F, 63 V Electrolytic Chip Capacitor 6.8 pF Chip Capacitors 1 pF Chip Capacitors 0.2 pF Chip Capacitors 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number 12065G105AT2A GRM55ER71H475KA01L 2222 136 68221 ATC100B6R8BT500XT ATC100B1R0BT500XT ATC100B0R2BT500XT CRCW12061001FKEA CRCW120610R1FKEA Manufacturer AVX Murata Vishay ATC ATC ATC Vishay Vishay
MRF7S18125BHR3 MRF7S18125BHSR3 4 RF Device Data Freescale Semiconductor
VDD VGS R1 R2 C1 C8 C9 C2 C3
R3 C14 C16
C6 C18 C10 C15 CUT OUT AREA C17
C7
C12
C13
C11
C4
C5
MRF7S18125BH Rev. 0
Figure 2. MRF7S18125BHR3(HSR3) Test Circuit Component Layout
MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
18 17.5 Gps, POWER GAIN (dB) 17 16.5 D 16 15.5 IRL 15 1930 1940 1950 1960 1970 1980 52 1990 -19 54 53 VDD = 28 Vdc Pout = 125 W CW, IDQ = 1100 mA 58 57 D, DRAIN EFFICIENCY (%) 56 55 -7 -9 -11 -13 -15 -17
Gps
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 125 Watts CW
17.5 17 Gps, POWER GAIN (dB) 16.5 16 IRL 15.5 15 EVM 14.5 1930 1940 1950 1960 1970 1980 0 1990 D VDD = 28 Vdc, Pout = 57 W Avg. IDQ = 1100 mA, EDGE Modulation Gps 60 50 40 30 20 10 -9 -11 -13 -15 -17 -19 -21
D, DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB) IM5-L IM7-U IM7-L 10 IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
Figure 4. Power Gain, Input Return Loss, EVM and Drain Efficiency versus Frequency @ Pout = 57 Watts Avg.
18 IDQ = 1650 mA 17 Gps, POWER GAIN (dB) 1100 mA 16 825 mA 550 mA 15 1375 mA IMD, INTERMODULATION DISTORTION (dBc) 0 -10 -20 -30 -40 -50 -60 0.1 1 100 TWO-TONE SPACING (MHz) IM3-U IM3-L IM5-U VDD = 28 Vdc, Pout = 125 W (PEP) IDQ = 1100 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
14 VDD = 28 Vdc f = 1960 MHz 13 10 100 Pout, OUTPUT POWER (WATTS) CW 300
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion Products versus Two - Tone Spacing
MRF7S18125BHR3 MRF7S18125BHSR3 6 RF Device Data Freescale Semiconductor
EVM, ERROR VECTOR MAGNITUDE (% rms)
TYPICAL CHARACTERISTICS
60 59 Pout, OUTPUT POWER (dBc) 58 Gps, POWER GAIN (dB) 57 56 55 54 P1dB = 51.61 dBm (145 W) 53 52 51 50 33 34 35 36 VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 12 sec(on), 1% Duty Cycle, f = 1960 MHz 37 38 39 40 41 42 43 P3dB = 52.16 dBm (164.4 W) P6dB = 52.59 dBm (181.6 W) Ideal 18 17.5 17 16.5 16 15.5 15 14.5 14 13.5 13 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 1100 mA f = 1960 MHz Gps TC = -30_C 25_C 85_C -30_C 25_C 85_C 65 60 D, DRAIN EFFICIENCY (%) 200 55 50 45 40 35 30 25 20 15 300
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus Input Power
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) 6 EVM, ERROR VECTOR MAGNITUDE (% rms) 5 4 3 50 W Avg. 2 1 0 1930 18 W Avg. VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation Pout = 78 W Avg. -50
Figure 8. Power Gain and Drain Efficiency versus Output Power
Pout = 78 W Avg. -55 SR @ 400 kHz -60 50 W Avg. -65 78 W Avg. -70 18 W Avg. -75 SR @ 600 kHz 50 W Avg. 18 W Avg. 1940 1950 1960 1970 1980 1990 VDD = 28 Vdc IDQ = 1100 mA EDGE Modulation
1940
1950
1960
1970
1980
1990
-80 1930
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 9. EVM versus Frequency
-35 SPECTRAL REGROWTH @ 400 kHz (dBc) SPECTRAL REGROWTH @ 600 kHz (dBc) -40 -45 -50 -55 -60 -65 -70 -75 0 20 40 60 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) 85_C TC = -30_C VDD = 28 Vdc IDQ = 1100 mA f = 1960 MHz EDGE Modulation 25_C -45 -50
Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency
25_C -55 -60 85_C -65 TC = -30_C -70 -75 -80 -85 0 20 40 60 80 100 120 140 160 180 Pout, OUTPUT POWER (WATTS) VDD = 28 Vdc, IDQ = 1100 mA f = 1960 MHz, EDGE Modulation
Figure 11. Spectral Regrowth at 400 kHz versus Output Power
Figure 12. Spectral Regrowth at 600 kHz versus Output Power
MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
EVM, ERROR VECTOR MAGNITUDE (% rms) 24 20 16 12 D 8 -30_C 4 EVM 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. 0 500 14 1930 1940 1950 1960 1970 85_C 10 VDD = 28 Vdc, IDQ = 1100 mA f = 1960 MHz, EDGE Modulation 60 25_C 50 85_C 40 30 20 Gps, POWER GAIN (dB) TC = 25_C D, DRAIN EFFICIENCY (%) 18 TC = -30_C 19
17 25_C 16 85_C 15 VDD = 28 Vdc Pout = 125 W CW IDQ = 1100 mA 1980 1990
-30_C
f, FREQUENCY (MHz)
Figure 13. EVM and Drain Efficiency versus Output Power
109
Figure 14. Power Gain versus Frequency
108 MTTF (HOURS)
107
106
105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 125 W CW, and D = 55%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
Figure 15. MTTF versus Junction Temperature
MRF7S18125BHR3 MRF7S18125BHSR3 8 RF Device Data Freescale Semiconductor
GSM TEST SIGNAL
-10 -20 -30 -40 -50 (dB) -60 -70 -80 -90 -100 -110 Center 1.96 GHz 200 kHz Span 2 MHz 400 kHz 600 kHz 400 kHz 600 kHz Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz
Figure 16. EDGE Spectrum
MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 9
Zo = 5
f = 2040 MHz
Zload f = 1880 MHz
f = 2040 MHz Zsource f = 1880 MHz
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 125 W CW f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 1.31 - j3.61 1.25 - j3.06 1.21 - j3.30 1.17 - j3.17 1.13 - j3.06 1.10 - j2.92 1.06 - j2.83 0.99 - j2.75 0.91 - j2.66 Zload W 1.32 - j3.06 1.30 - j2.92 1.28 - j2.79 1.26 - j2.67 1.23 - j2.55 1.20 - j2.42 1.18 - j2.30 1.16 - j2.18 1.12 - j2.07
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance MRF7S18125BHR3 MRF7S18125BHSR3 10 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61 60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 49 32 33 34 35 P1dB = 52.89 dBm (194.5 W) Actual P6dB = 54.29 dBm (268.5 W) P3dB = 53.76 dBm (237.7 W) Ideal
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f =1960 MHz 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 0.65 - j4.06 Zload 0.73 - j2.62
Figure 18. Pulsed CW Output Power versus Input Power @ 28 V
MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF7S18125BHR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF7S18125BHSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF7S18125BHR3 MRF7S18125BHSR3 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Nov. 2008 * Initial Release of Data Sheet Description
MRF7S18125BHR3 MRF7S18125BHSR3 RF Device Data Freescale Semiconductor 13
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MRF7S18125BHR3 MRF7S18125BHSR3
Rev. 14 0, 11/2008 Document Number: MRF7S18125BH
RF Device Data Freescale Semiconductor

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