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| SSG9575 -4A, -60V,RDS(ON) 90m[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description The SSG9575 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. The SOP-8 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 4.80 5.00 0.100.25 3.80 4.00 6.20 5.80 0.25 0.40 0.90 0.19 0.25 45 o 0.375 REF Features * Low on-resistance * Simple drive requirement D 8 D 7 D 6 D 5 0 o 8 o 1.35 1.75 Dimensions in millimeters D * Fast switching characteristic 9575SC Date Code G 1 S 2 S 3 S 4 G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings -60 25 -4 -3.2 -20 3 0.02 Unit V V A A A W W / oC o 3 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient Max. Symbol Rthj-a Ratings 50 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SSG9575 Elektronische Bauelemente -6A, -60V,RDS(ON) 90m[ P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -60 _ Typ. _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C,ID=-1mA VDS=VGS, ID=-250uA VGS= 25V VDS=-60V,VGS=0 VDS=-48V,VGS=0 VGS=-10V, ID=-4A VGS=-4.5V, ID=-3A o -0.04 _ _ _ _ -1.0 _ _ _ _ -3.0 100 -1 -25 90 120 28 _ _ _ _ 18 5 7 12 5 68 32 1745 RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2 nC ID=-4A VDS=-48V VGS=-4.5V _ _ _ _ VDD=-30V ID=-1A nS VGS=-10V RG=3.3[ RD=30 [ 2790 _ _ 165 125 7 pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-4A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ Typ. _ 56 146 Max. -1.2 Unit V Test Condition IS=-2A, VGS=0V. Is=-4A, VGS=0V dl/dt=100A/us Reverse Recovery Time 2 Trr Qrr _ _ _ _ nS nC Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SSG9575 Elektronische Bauelemente -4A, -60V,RDS(ON) 90m[ P-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SSG9575 Elektronische Bauelemente -4A, -60V,RDS(ON) 90m [ P-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Circuit Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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