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VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
FEATURES
* High voltage * Electrically isolated by DBC ceramic (AI2O3) * * * * * * * * *
New INT-A-PAKTM
RoHS 3500 VRMS isolating voltage COMPLIANT Industrial standard package High surge capability Glass passivated chips Modules uses high voltage power thyristor/diodes in three basic configurations Simple mounting UL E78996 approved Totally lead (Pb)-free Designed and qualified for multiple level
DC motor control and drives Battery charges Welders Power converters Lighting control Heat and temperature control
APPLICATIONS PRODUCT SUMMARY
IT(AV) 135 to 160 A
* * * * * *
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IT(AV) IT(RMS) ITSM I2 t I2t VRRM TJ Range Range 50 Hz 60 Hz 50 Hz 60 Hz CHARACTERISTICS 85 C VSK.136.. 135 300 3200 3360 51.5 47 515.5 VSK.142.. 140 310 4500 4712 102 92.5 1013 400 to 1600 - 40 to 125 VSK.162.. 160 355 4870 5100 119 108 1190 kA2s kA2s V C A UNITS A
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 VSK.136 VSK.142 VSK.162 08 12 14 16 VRRM/VDRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 1400 1600 VRSM/VDSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 900 1300 1500 1700 50 IRRM/IDRM AT 125 C mA
Document Number: 94513 Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
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VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
TEST CONDITIONS 180 conduction, half sine wave As AC switch t = 10 ms Maximum peak, one-cycle on-state, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM VFM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied Sine half wave, initial TJ = TJ maximum VSK.136 VSK.142 VSK.162 135 85 300 3200 3360 2700 2800 51.5 47 36.5 33.3 515.5 0.86 1.05 2.02 1.65 1.57 1.57 140 85 310 4500 4712 3785 3963 102 92.5 71.6 65.4 1013 0.83 1 1.78 1.43 1.55 1.55 200 400 mA 160 85 355 4870 5100 4100 4300 119 108 84 76.7 1190 0.8 0.98 1.67 m (I > x IT(AV)), TJ maximum ITM = x IT(AV), TJ = 25 C, 180 conduction ITM = x IT(AV), TJ = 25 C, 180 conduction Anode supply = 6 V initial IT = 30 A, TJ = 25 C Anode supply = 6 V resistive load = 1 Gate pulse: 10 V, 100 s, TJ = 25 C 1.38 1.54 1.54 V V kA2s V kA2s A UNITS A C
FORWARD CONDUCTION
PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS)
t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum (I > x IT(AV)), TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum forward voltage drop Maximum holding current Maximum latching current
SWITCHING
PARAMETER Typical delay time Typical rise time Typical turn-off time SYMBOL tgd tgr tq TJ = 25 C TEST CONDITIONS Gate current = 1 A, dlg/dt = 1 A/s Vd = 0.67 % VDRM VALUES 1 2 50 to 200 s UNITS
ITM = 300 A, - dl/dt = 15 A/s; TJ = TJ maximum VR = 50 V; dV/dt = 20 V/s; gate 0 V, 100
BLOCKING
PARAMETER Maximum peak reverse and off-state leakage current RMS insulation voltage Critical rate of rise of off-state voltage SYMBOL IRRM, IDRM VINS dV/dt TJ = 125 C 50 Hz, circuit to base, all terminals shorted, t = 1 s TJ = TJ maximum, exponential to 67 % rated VDRM TEST CONDITIONS VALUES 50 3500 1000 UNITS mA V V/s
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Document Number: 94513 Revision: 12-Aug-08
VSK.136, .142, .162..PbF Series
Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL PGM PG(AV) IGM - VGT tp 5 ms, TJ = TJ maximum TJ = - 40 C VGT TJ = 25 C TJ = TJ maximum TJ = - 40 C Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger Maximum rate of rise of turned-on current IGT TJ = 25 C TJ = TJ maximum VGD TJ = TJ maximum, rated VDRM applied IGD dI/dt TJ = TJ maximum, ITM = 400 A rated VDRM applied 10 300 mA A/s Anode supply = 6 V, resistive load; Ra = 1 TEST CONDITIONS tp 5 ms, TJ = TJ maximum f = 50 Hz, TJ = TJ maximum VALUES 12 3 3 10 4 2.5 1.7 270 150 80 0.3 V mA V UNITS W A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case per junction Maximum thermal resistance, case to heatsink per module Mounting torque 10 % Approximate weight Case style IAP to heatsink busbar to IAP SYMBOL TJ TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. TEST CONDITIONS VALUES - 40 to 125 C - 40 to 150 0.18 0.05 4 to 6 200 7.1 New INT-A-PAK Nm g oz. 0.16 K/W UNITS
R CONDUCTION PER JUNCTION
DEVICES 180 VSK.136 VSK.142 VSK.162 0.007 0.0019 0.0030 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120 0.01 0.0019 0.0031 90 0.013 0.0020 0.0032 60 0.0155 0.0020 0.0033 30 0.017 0.0021 0.0034 180 0.009 0.0018 0.0029 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120 0.012 0.0022 0.0036 90 0.014 0.0023 0.0039 60 0.015 0.0023 0.0041 30 0.017 0.0020 0.0040 K/W UNITS
Note * Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94513 Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
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VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
350 M axim um Averag e O n-state Pow er Loss (W ) 300 250 200 150 100 50 0 0 50 1 00
C o n d uc tio n P eriod
130 120 110
VSK.136.. Series RthJC (DC) = 0.18 K/W
Maximum Allowable Case Temperature (C)
Conduction Angle
100 90 80 70 0 20 40 60 80 100 120 140
DC 180 120 90 60 30
RM S Lim it
30 60 90 120 180
VSK .136.. Se ries Per Junction TJ = 12 5C 1 50 2 00 2 50
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
A vera ge O n -sta te C urrent (A)
Fig. 4 - On-State Power Loss Characteristics
130 Maximum Allowable Case Temperature (C) 120 110
Pea k H alf Sin e W a ve O n -sta te C urren t (A )
VSK.136.. Series RthJC (DC) = 0.18 K/W
30 0 0 28 0 0 26 0 0 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 14 0 0 12 0 0 1
A t A ny R ate d Lo ad Co nditio n A n d W ith R ated VRRM A pplied Follo w ing Surge .
In itial TJ = 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
Conduction Period
100
30
90 80 70 0 50 100 150 200 250 Average On-state Current (A)
60 90 120 180 DC
VSK.136.. Series Per Junction 10 100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum Average On-state Power Loss (W)
250 200 150 100 50 0 0
180 120 90 60 30
Peak Ha lf Sine W a ve O n -sta te C urrent (A)
300
35 0 0
30 0 0
Maxim um No n Repetitive Surge Curre nt V ers us Pulse Train D uratio n. C ontrol O f Co nductio n M ay Not Be M aintained. In itial TJ = 125C No V oltag e Re ap plie d Ra te d V Re ap plie d
RRM
25 0 0
RMS Limit
20 0 0
Conduction Angle
VSK.136.. Series Per Junction TJ = 125C 30 60 90 120 150
15 0 0 VSK.1 36.. Se ries Pe r Ju nction 10 0 0 0 .0 1 0.1 Pulse Tra in D ura tion (s) 1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94513 Revision: 12-Aug-08
VSK.136, .142, .162..PbF Series
Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
450
0.
0.
M axim um Tota l O n -sta te Pow e r Loss (W )
R th
12
08
0 .0
400 350 300 250 200 150 100 50 0 0 50 100
C onductio n Angle
180 120 90 60 30
0.
0.
K/ W
W K/
W
K/
16
SA
4K /W
W
.01 =0
25
K/
K/ W -
0 .4
K/ W
R
0 .6
K/ W
1 K/ W
VSK.136.. Se rie s Pe r M odule TJ = 12 5C
150 200 250 300 0
25
50
75
1 00
125
Tota l R M S Outp ut C urre nt (A)
M axim um A llowab le Am bient Tem pera ture (C)
Fig. 7 - On-State Power Loss Characteristics
1 0 00
A hS Rt
M axim um To ta l P o we r Lo ss (W )
90 0 80 0 70 0 60 0 50 0 40 0 30 0 20 0 10 0 0 0 55 11 0 165 220 20 5 7 25 2 x VSK.136.. Series Single P hase Brid ge C onnected T J = 125C
0 .3 5 K/ W
0. 04
0.
=
K/
08
0.0
W
180 (Sine ) 180 (Re ct)
0.
12
K/
W
/W 1K
K/
W
R
0 .2
K/
W
0. 6 K
/W
50
75
100
125
Total O utp ut C urre nt (A)
M axim um Allowab le Am bient Te m p era ture (C )
Fig. 8 - On-State Power Loss Characteristics
15 0 0 M a xim u m To ta l Po w e r Lo ss (W )
Rt
A hS
12 0 0
0. 08
= 0. 04 K/ W
90 0
120 (Rec t)
0.1
K/
-
W
R
K/
W
0 .1
60 0 3 x VSK.1 3 6.. Serie s Th ree Ph a se B rid g e C o n n ec te d TJ = 1 2 5C 0 10 0 20 0 3 00
6K /
W
30 0
K/ W 0 .4 K /W
0 . 25
1 K/ W
0 40 00 25 50 75 1 00 1 25 To ta l O u tp u t C u rre nt (A) M axim u m A llo w a b le A m b ien t Tem p e ra tu re (C)
Fig. 9 - On-State Power Loss Characteristics
Document Number: 94513 Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
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VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
35 0 M axim um Averag e O n -state Pow er Loss (W ) VSK.142.. Series R thJC (D C ) = 0.18 K/W 30 0 25 0 20 0 R M S L im it 15 0 10 0 50 0 0 50 1 00 1 50 2 00 2 50 Averag e O n-state C urren t (A )
C o nd u c tio n Pe rio d
130 M a xim um Allo w ab le C ase Tem peratur e (C) 120 110
C o nd uctio n Angle
DC 180 120 90 60 30
100 90 80 70 0 30 60 90 1 20 1 50 A vera ge Forw a rd C urrent (A) 30 60 90 120 180
VSK .1 4 2 .. Se rie s P er Ju n c tio n TJ = 1 2 5C
Fig. 10 - Current Ratings Characteristics
Fig. 13 - On-State Power Loss Characteristics
130 M axim um Allow a ble C ase Tem perature (C) 120 110
Peak H a lf Sin e W a ve O n -stat e C urren t (A)
VSK.1 4 2 .. Se rie s R thJC (D C ) = 0 .1 8 K /W
45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0 15 0 0 1
A t A ny Rated Lo ad Co nditio n A n d W ith R ated V RRM A pplied Follo w ing Surge .
In itial TJJ= 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
C o n d uc tio n P e rio d
100 30 90 80 70 0 50 100 15 0 200 25 0 Averag e O n-state C urrent (A) 60 90 120 180 DC
VSK.142.. Series Per Junction 10 100
N um b er O f Eq ua l A m p litud e H a lf Cy cle C urrent P ulses (N )
Fig. 11 - Current Ratings Characteristics
Fig. 14 - Maximum Non-Repetitive Surge Current
M axim um A ve ra ge O n -sta te Po w er Lo ss (W )
25 0 180 120 90 60 30 RMS Lim it 10 0
C o nd uc tio n Angle
Pea k H alf Sin e W ave O n -sta te C urren t (A)
5 00 0 4 50 0 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0
20 0
M axim um Non Repetitive Surge Current V e rsus Pulse Train D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained .
In itial TJJ= 125C
N o V oltag e Re a pp lied Ra te d VR R M Re a pp lie d
15 0
50
VSK .142.. Series Per Junction TJ = 12 5C 0 30 60 90 1 20 1 50
VSK.1 42.. Se rie s Pe r Ju nction 0 .1 Pu lse Tra in D uration (s) 1
0 Averag e O n-state C urren t (A )
1 50 0 0 .0 1
Fig. 12 - On-State Power Loss Characteristics
Fig. 15 - Maximum Non-Repetitive Surge Current
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Document Number: 94513 Revision: 12-Aug-08
VSK.136, .142, .162..PbF Series
Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
400
M axim um Total O n-state Pow e r Lo ss (W )
0. 12 K/
0.
R th
0.0
0.
16
08
4K
300
180 120 90 60 30
SA
K/ W 25 K/ W 0.
W
K/ W
=0 .0 1 K/ W
/W
0 .4
R -
K/
W
200
C o nductio n A n g le
0 .6
K/ W
100
VSK.142.. Se rie s Per M odule TJ = 125C
1K /W
0 0 50 100 150 200 250 30 0
25
50
75
10 0
12 5
Tota l R M S O utp ut C urre nt (A)
M axim um A llowa ble A m b ient Tem perature (C)
Fig. 16 - On-State Power Loss Characteristics
1 00 0
R th
0. 04
M a xim um Tota l P o w er Lo ss (W )
SA
80 0
0.
0 .1
K/
08
W
.0 =0
K/
W
/W 1K
60 0
40 0
180 (Sine ) 180 (Re ct)
0.1 6K /W
2K /W
R
0 .2
5K /W
20 0
0 0 100
2 x VSK .1 4 2.. Se ries Sin g le P h a se Brid g e C o n n ec te d T J = 12 5C 2 00 0 3 00
0 .6 K /W
25
50
75
10 0
12 5
To ta l O u tp ut C u rre nt (A )
M axim um A llowa ble A m b ient Tem perature (C)
Fig. 17 - On-State Power Loss Characteristics
16 0 0 Ma xim u m Total Power Lo ss (W )
S R th
0. 04 K/
A
12 0 0 120 (Rec t) 8 00
0. 06 K/
=
W
0.0 / 2K W
W
-
0.0
R
8K /W
4 00
W 3 x VSK.142.. Series Three P hase Brid ge 0 .1 6 K/ W C o nnected 0.2 K/ W TJ = 125C
0.1
K/
0 0 0 5 0 10 0 1 5 0 20 0 25 0 30 0 35 0 4 0 0 45 0 Total O utp ut C urre nt (A) 25 50 75 10 0 12 5 M axim um A llowab le Am bie nt Tem perature (C)
Fig. 18 - On-State Power Loss Characteristics
Document Number: 94513 Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
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VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
40 0 M a xim um A vera g e O n -sta te Pow e r Lo ss (W ) 35 0 30 0 25 0 20 0 15 0 10 0 50 0 0 30 60
C o n du c tio n Pe rio d
130 M a xim um A llow ab le C a se Tem p era ture (C) 120 110
VSK.162.. Series R thJ C (D C ) = 0.16 K/W
C o nd uc tio n Angle
DC 180 120 90 60 30 RM S Lim it
100 90 80 70 0 30 60 90 1 20 150 180 Averag e Fo rw ard C urrent (A) 30 60 90 120 180
VSK.162.. Series Per Junctio n TJ = 125C 9 0 1 2 0 15 0 1 80 2 10 2 4 0 2 7 0
Averag e O n -sta te C urren t (A )
Fig. 19 - Current Ratings Characteristics
Fig. 22 - On-State Power Loss Characteristics
1 30 M axim um Allow a b le C ase Tem perature (C) 1 20 1 10 1 00 90 80 70 60 0 50 30
Pea k H alf Sin e W a ve O n-state C urren t (A )
VSK .162.. Series R thJC (DC ) = 0.16 K/W
4 50 0 4 00 0 3 50 0 3 00 0 2 50 0 2 00 0 1 50 0 1
A t A ny R ate d Lo ad C on dition A n d W ith Rate d VRRM A pplie d Fo llow ing Surg e.
In itial TJ = 125C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
C on d uctio n P e rio d
60 90 120 180 100 15 0 20 0 DC 2 50 300
VSK.162.. Series Per Jun ction 10 10 0
A vera ge O n -sta te C urrent (A)
Num b er O f Eq ua l Am p litud e H a lf C ycle C urrent P ulse s (N)
Fig. 20 - Current Ratings Characteristics
Fig. 23 - Maximum Non-Repetitive Surge Current
4 00 M axim um Averag e O n-state Pow er Loss (W ) 3 50 3 00 2 50 2 00 1 50 1 00 50
C o nd uc tio n Angle
50 0 0 Peak Ha lf Sine W av e O n -sta te C urrent (A) VSK .162.. Se ries Per Junction T = 125C J 180 120 90 60 30 45 0 0 40 0 0 35 0 0 30 0 0 25 0 0 20 0 0
M axim um Non Repetitive Surge Current V e rsus Pulse Tra in D uratio n. C o ntro l O f Co nductio n Ma y No t Be M aintained . In itia l TJ = 125C No V olta ge Re ap plied Ra te d VR R M Re ap plie d
RM S Lim it
VSK .162.. Series Per Junction 0 .1
Pu lse Tra in D uration (s)
0 0 20 40 60 8 0 10 0 1 20 1 40 1 6 0 1 8 0 Averag e O n-state C urren t (A)
15 0 0 0.0 1
1
Fig. 21 - On-State Power Loss Characteristics
Fig. 24 - Maximum Non-Repetitive Surge Current
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Document Number: 94513 Revision: 12-Aug-08
VSK.136, .142, .162..PbF Series
Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
600 M a xim um T ota l O n-state Pow e r Loss (W )
Rt
0. 04
0.
A hS
500 400 300
C onductio n An gle
180 120 90 60 30
06
08
0.
K/ W
K/ W
W K/
= 0. 0 2 K/
0.1
W
K/
W
R
0 .1
6K /W
200 VSK.162.. Se rie s Pe r M odule TJ = 125C 0 100 200 300 400 0
0.2
K/ W
100 0
25
50
75
100
125
Tota l RM S O utp ut C urre nt (A)
M axim um A llowab le Am b ie nt Tem p era ture (C)
Fig. 25 - On-State Power Loss Characteristics
9 00 M axim um Total P ower Lo ss (W ) 8 00 7 00 6 00 5 00 4 00 3 00 2 00 1 00 0 0 50 100 15 0 20 0 25 0 0 3 00 25 50 75 10 0 12 5 Tota l O utput C urrent (A) M axim um A llo wa ble A m b ient Tem perature (C)
180 (Sine ) 180 (Re ct)
0.
0. 08
Rt
K/
A hS
W
=
12
0.
K/
04
W
K/ W
0.2
-
K/
R
W
0.3
0 .4
K/ W
K/ W
2 x VSK.162.. Series 0 .6 K/ W Single Phase Brid ge 1 K/ W C onnected TJ = 125C
Fig. 26 - On-State Power Loss Characteristics
1 5 00
S R th
0.
M axim u m To tal Po wer Loss (W )
04
1 2 50 1 0 00 7 50 5 00 2 50 0 0 50 1 0 0 15 0 2 00 25 0 3 0 0 3 5 0 4 00 40 50 Tota l Output C urrent (A) 120 (Rect)
0. 08
K/ W
K/ W
A
= 0. 0 2 K/ W -
0 .1
0 .2
R
2K /W
K/ W
3 x VSK.162.. Series 0 .3 K /W Three Phase Brid ge 0. 6 K / W C onnected TJ = 12 5C 25 50 75 100 125
M a xim um Allo w a b le A m b ie n t Te m p era tu re (C)
Fig. 27 - On-State Power Loss Characteristics
Document Number: 94513 Revision: 12-Aug-08
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VSK.136, .142, .162..PbF Series
Vishay High Power Products
Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
1
Transient Thermal Impedance Z thJC
Steady State Value (DC Operation)
10000
Instantaneous On-state Current (A)
1000
TJ = 25C TJ = 125C
0.1
100
0.01
10
VSK.136.. Series Per Junction
VSK.136.. Series
1 0 1 2 3 4 5
Instantaneous On-state Voltage (V)
0.001 0.001
0.01 0.1 1 Square Wave Pulse Duration (s)
10
Fig. 28 - On-State Voltage Drop Characteristics
Fig. 31 - Thermal Impedance ZthJC Characteristics
10000
Transient Thermal Impedance Z thJC
1
Steady State Value (DC Operation)
Instantaneous On-state Current (A)
1000
T = 25C J T = 125C
J
100
0.1
10
VSK.142.. Series Per Junction
VSK.142.. Series
1 0 1 2 3 4 5
Instantaneous On-state Voltage (V)
0.01 0.01
0.1 1 Square Wave Pulse Duration (s)
10
Fig. 29 - On-State Voltage Drop Characteristics
Fig. 32 - Thermal Impedance ZthJC Characteristics
10000
Transient Thermal Impedance Z thJC
1
Steady State Value (DC Operation)
Instantaneous On-state Current (A)
1000
TJ = 25C TJ = 125C
100
0.1
10
VSK.162.. Series Per Junction
VSK.162.. Series
1 0 1 2 3 4 5 Instantaneous On-state Voltage (V)
0.01 0.01
0.1 1 Square Wave Pulse Duration (s)
10
Fig. 30 - On-State Voltage Drop Characteristics
Fig. 33 - Thermal Impedance ZthJC Characteristics
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Document Number: 94513 Revision: 12-Aug-08
VSK.136, .142, .162..PbF Series
Thyristor/Diode and Vishay High Power Products Thyristor/Thyristor, 135 A to 160 A (New INT-A-PAKTM Power Modules)
1 00
Rec ta ng ula r g a te p ulse a )Re c o m m end e d lo a d line fo r ra ted d I/d t: 20 V, 20 W tr = 0.5 s, tp >= 6 s b )Re c o m m end e d loa d line fo r <= 30% ra ted d I/d t: 15 V , 40 W tr = 1 s, tp >= 6 s
In stan ta neous G a te V olta ge (V )
(1) (2) (3) (4)
(a) (b )
T J = -40 C T J = 25 C
PG M PG M PG M PG M
= = = =
200 W , tp = 300 s 60 W , tp = 1 m s 30 W , tp = 2 m s 12 W , tp = 5 m s
10
T J = 12 5 C
1
(4)
(3 ) (2)
(1)
VG D IG D
VSK.1 3 6 ..1 4 2 ..1 6 2 .. Se ries 0 .1 1
Frequen cy Lim ited by PG (AV ) 10 100 1 00 0
0 .1 0 .0 0 1
0.0 1
Instan ta n eous G a te C urren t (A )
Fig. 34 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
1 1 2 3 4 5 -
T
2
162
3
/
16
4
PbF
5
Module type Circuit configuration Current rating: IT(AV) Voltage code x 100 = VRRM PbF = Lead (Pb)-free
Note * To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
VSKT...
~
VSKH...
~
VSKL...
~
+
+
+
+ K1 G1
+
K2 K1 G1 G2
+
-
-
K2 G2
-
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95067
Document Number: 94513 Revision: 12-Aug-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com 11
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
www.vishay.com 1

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