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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD111 DESCRIPTION *High Power Dissipation: PC= 100W@TC= 25 *High Current Capability: IC = 10A APPLICATIONS *Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IE IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 100 80 UNIT V Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous w w scs .i w 10 10 -10 3 100 150 -65~150 .cn mi e V V A A A W PC TJ Tstg Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 50mA ; RBE= MIN TYP. 2SD111 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA ; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 5A; IB= 1A B 2.5 V Collector Cutoff Current VCB= 50V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 hFE-1 DC Current Gain hFE-2 DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance hFE-2 Classifications R 30-90 O 50-150 w Y ww scs .i IC= 1A; VCE= 5V IC= 5A; VCE= 5V IC= 1A ; VCE= 10V .cn mi e 30 10 10 mA 300 1 MHz IE= 0; VCB= 50V; f= 1MHz 200 pF 100-300 isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SD111
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